Even though there have been many experimental attempts and theoretical approaches to understand the process of electromigration (EM), it has not been quantitatively understood for ultrathin structures and at grain boundaries. Nevertheless, we showed recently that it can be used reliably for the formation of single atomic point contacts after careful pre-structuring of the initial Ag nanostructures. The process of formation of nanocontacts by EM down to a single-atom point contact was investigated for ultrathin (5 nm) Ag structures at 100 K by measuring the conductance as a function of the time during EM. In this paper, we compare the process of thinning by EM of structures with constrictions below the average grain size of Ag layers (15 nm) with that of structures with much larger initial constrictions of around 150 nm having multiple grains at the centre constriction prior to the formation of a point contact. Even though clear morphological differences exist between both types of structures, quantized conductance plateaus showing the formation of single point contacts have been observed for both. Here we put emphasis on the thinning process by EM, just before a point contact is formed. To understand this thinning process, the semi-classical regime before the contact reaches the quantum regime was analyzed in detail. For this purpose, we used experimental conductance histograms in the range between 2G
0 and 15G
0 and their corresponding Fourier transforms (FTs). The FT analysis of the conductance histograms exhibits a clear preference for thinning along the [100] direction. Using well-established models, both atom-by-atom steps and ranges of stability, presumably caused by electronic shell effects, can be discriminated. Although the directional motion of atoms during EM leads to specific properties such as the instabilities mentioned, similarities to mechanically opened contacts with respect to cross-sectional stability were found.
Point contact spectroscopy of superconductors via nanometer scale point contacts formed by resistive switching
