Shock-induced conduction waves in solids and their applications in high power systems

1996 ◽  
Author(s):  
S. D. Gilev ◽  
A. M. Trubachev
Keyword(s):  
2017 ◽  
Vol 32 (2) ◽  
pp. 788-797 ◽  
Author(s):  
Tuyen Van Vu ◽  
David Gonsoulin ◽  
Fernand Diaz ◽  
Chris S. Edrington ◽  
Touria El-Mezyani

Author(s):  
Laurent Lamaignère ◽  
Roger Courchinoux ◽  
Nadja Roquin ◽  
Romain Parreault ◽  
Thierry Donval

2012 ◽  
Vol 717-720 ◽  
pp. 1249-1252 ◽  
Author(s):  
Xue Qing Li ◽  
Petre Alexandrov ◽  
Leonid Fursin ◽  
Christopher Dries ◽  
Jian Hui Zhao

This paper reports the design and experimental demonstration of a novel bi-directional solid-state disconnect (SSD) based on Silicon Carbide (SiC) depletion-mode junction field effect transistors (JFETs) for protecting critical sensitive components in high power systems. The SSD is able to provide a fast disconnect action upon receiving a preset trip current flowing through it and has a very low insertion loss, which makes it suitable for high power applications. For the application in 150kW six-phase power inverter systems, an insertion loss of less than 0.91% and a current fall time of less than 20μs for trip currents of about 800A have been demonstrated experimentally. To the best of our knowledge, there are no other solid-state disconnects available of comparable parameters.


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