Theoretical investigation of a low-voltage Ge/SiGe multiple quantum wells optical modulator operating at 1310 nm integrated with Si3N4 waveguides
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1994 ◽
Vol 6
(6)
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pp. 700-702
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1992 ◽
Vol 120
(1-4)
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pp. 343-348
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1987 ◽
Vol 48
(C5)
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pp. C5-511-C5-515
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1987 ◽
Vol 48
(C5)
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pp. C5-239-C5-242
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