scholarly journals Defect detection in monocrystalline silicon wafers using high frequency guided waves

2019 ◽  
Author(s):  
Bernard Masserey ◽  
Mathieu Simon ◽  
Jean-Luc Robyr ◽  
Paul Fromme
Keyword(s):  
Defect Detection ◽  
High Frequency ◽  
Guided Waves ◽  
Silicon Wafers ◽  
Monocrystalline Silicon

scholarly journals High frequency guided wave defect imaging in monocrystalline silicon wafers

2019 ◽  
Author(s):  
Mathieu Simon ◽  
Bernard Masserey ◽  
Jean-Luc Robyr ◽  
Paul Fromme
Keyword(s):  
High Frequency ◽  
Guided Wave ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Defect Imaging

scholarly journals High frequency guided wave propagation in monocrystalline silicon wafers

2017 ◽  
Author(s):  
Marco Pizzolato ◽  
Bernard Masserey ◽  
Jean-Luc Robyr ◽  
Paul Fromme
Keyword(s):  
Wave Propagation ◽  
High Frequency ◽  
Guided Wave ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Guided Wave Propagation

DEFECT DETECTION IN MULTI-LAYERED STRUCTURES USING HIGH FREQUENCY GUIDED WAVES

2011 ◽  
Author(s):  
B. Masserey ◽  
E. Kostson ◽  
P. Fromme ◽  
Donald O. Thompson ◽  
Dale E. Chimenti
Keyword(s):  
Defect Detection ◽  
High Frequency ◽  
Guided Waves ◽  
Layered Structures

High Frequency Guided Wave Propagation and Scattering in Silicon Wafers

2021 ◽  
pp. 1-18
Author(s):  
Jean-Luc Robyr ◽  
Mathieu Simon ◽  
Bernard Masserey ◽  
Paul Fromme
Keyword(s):  
Wave Propagation ◽  
Wave Field ◽  
High Frequency ◽  
Surface Defects ◽  
Wave Mode ◽  
Guided Wave ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Custom Made

Abstract Thin monocrystalline silicon wafers are employed for the manufacture of solar cells with high conversion efficiency. Micro-cracks can be induced by the wafer cutting process, leading to breakage of the fragile wafers. High frequency guided waves allow for the monitoring of wafers and detection and characterization of surface defects. The material anisotropy of the monocrystalline silicon leads to variations of the guided wave characteristics, depending on the guided wave mode and propagation direction relative to the crystal orientation. Selective excitation of the first anti-symmetric A0 wave mode at 5 MHz center frequency was achieved experimentally using a custom-made wedge transducer. Strong wave pulses with limited beam skewing and widening were measured using non-contact laser interferometer measurements. This allowed the accurate characterization of the Lamb wave propagation and scattering at small artificial surface defects with a size of less than 100 µm. The surface extent of the defects of varying size was characterized using an optical microscope. The scattered guided wave field was evaluated, and characteristic parameters extracted and correlated to the defect size, allowing in principle detection of small defects. Further investigations are required to explain the systematic asymmetry of the guided wave field in the vicinity of the indents.

scholarly journals Silicon wafer defect detection using high frequency guided waves

2018 ◽  
Author(s):  
Paul Fromme ◽  
Bernard Masserey ◽  
Jean-Luc Robyr ◽  
Michael Lauper
Keyword(s):  
Silicon Wafer ◽  
Defect Detection ◽  
High Frequency ◽  
Guided Waves

Experimental investigation into polishing of monocrystalline silicon wafer using double-disc chemical assisted magnetorheological finishing process

2021 ◽  
pp. 095440622098384
Author(s):  
Mayank Srivastava ◽  
Pulak M Pandey
Keyword(s):  
Surface Roughness ◽  
Silicon Wafer ◽  
Flow Rate ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Slurry Flow ◽  
Magnetorheological Finishing ◽  
Finishing Process ◽  
Process Factors ◽  
Slurry Flow Rate

In the present work, a novel hybrid finishing process that combines the two preferred methods in industries, namely, chemical-mechanical polishing (CMP) and magneto-rheological finishing (MRF), has been used to polish monocrystalline silicon wafers. The experiments were carried out on an indigenously developed double-disc chemical assisted magnetorheological finishing (DDCAMRF) experimental setup. The central composite design (CCD) was used to plan the experiments in order to estimate the effect of various process factors, namely polishing speed, slurry flow rate, percentage CIP concentration, and working gap on the surface roughness ([Formula: see text]) by DDCAMRF process. The analysis of variance was carried out to determine and analyze the contribution of significant factors affecting the surface roughness of polished silicon wafer. The statistical investigation revealed that percentage CIP concentration with a contribution of 30.6% has the maximum influence on the process performance followed by working gap (21.4%), slurry flow rate (14.4%), and polishing speed (1.65%). The surface roughness of polished silicon wafers was measured by the 3 D optical profilometer. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were carried out to understand the surface morphology of polished silicon wafer. It was found that the surface roughness of silicon wafer improved with the increase in polishing speed and slurry flow rate, whereas it was deteriorated with the increase in percentage CIP concentration and working gap.

Sparse-based defect detection of weld feature guided waves with a fusion of shear wave characteristics

Measurement ◽  
2021 ◽  
Vol 174 ◽  
pp. 109018
Author(s):  
Zhenying Xu ◽  
Mengqi Wu ◽  
Wei Fan
Keyword(s):  
Shear Wave ◽  
Defect Detection ◽  
Guided Waves ◽  
Wave Characteristics

High Frequency Guided Wave Propagation and Scattering in Silicon Wafers

2021 ◽  
Author(s):  
Paul Fromme ◽  
Bernard Masserey
Keyword(s):  
Wave Propagation ◽  
High Frequency ◽  
Guided Wave ◽  
Silicon Wafers ◽  
Guided Wave Propagation
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