Crystallographic orientation control of silicon stripes in SiO2grooves using a new double laser annealing technique

1984 ◽  
Vol 44 (10) ◽  
pp. 962-964 ◽  
Author(s):  
Koji Egami ◽  
Masakazu Kimura ◽  
Tsuneo Hamaguchi
Keyword(s):  
Crystallographic Orientation ◽  
Laser Annealing ◽  
Orientation Control

Orientation Control and Properties of PZT Film Crystalized using Laser Annealing System

2016 ◽  
Vol 136 (12) ◽  
pp. 493-498 ◽  
Author(s):  
Junko Kazusa ◽  
Kazuhiro Koga ◽  
Norio Umeyama ◽  
Fumito Imura ◽  
Daiji Noda ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Orientation Control ◽  
Pzt Film

scholarly journals Crystallographic Orientation Control of 316L Austenitic Stainless Steel via Selective Laser Melting

2020 ◽  
Vol 60 (8) ◽  
pp. 1758-1764 ◽  
Author(s):  
Takuya Ishimoto ◽  
Siqi Wu ◽  
Yukinobu Ito ◽  
Shi-Hai Sun ◽  
Hiroki Amano ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Austenitic Stainless Steel ◽  
Selective Laser Melting ◽  
Crystallographic Orientation ◽  
Laser Melting ◽  
Orientation Control ◽  
316L Austenitic Stainless Steel

scholarly journals LaTiO2N crystallographic orientation control significantly increases visible-light induced charge extraction

2020 ◽  
Vol 8 (43) ◽  
pp. 22867-22873
Author(s):  
Eric Burns ◽  
Ulrich Aschauer ◽  
Max Döbeli ◽  
Christof W. Schneider ◽  
Daniele Pergolesi ◽  
...  
Keyword(s):  
Thin Film ◽  
Visible Light ◽  
Crystallographic Orientation ◽  
Orientation Control ◽  
Induced Charge ◽  
Charge Extraction

Visible-light induced photocharge extraction in LaTiO2N photoanodes increases by a significant 30% between (001) and (011) oriented thin-film samples.

Nanopatterning of graphene with crystallographic orientation control

Carbon ◽  
2010 ◽  
Vol 48 (10) ◽  
pp. 2677-2689 ◽  
Author(s):  
László P. Biró ◽  
Philippe Lambin
Keyword(s):  
Crystallographic Orientation ◽  
Orientation Control

scholarly journals Crystallographic orientation control and optical properties of GaN nanowires

RSC Advances ◽  
2018 ◽  
Vol 8 (4) ◽  
pp. 2181-2187 ◽  
Author(s):  
Shaoteng Wu ◽  
Liancheng Wang ◽  
Xiaoyan Yi ◽  
Zhiqiang Liu ◽  
Jianchang Yan ◽  
...  
Keyword(s):  
Optical Properties ◽  
Crystallographic Orientation ◽  
Orientation Control ◽  
Gan Nanowires

We employ a versatile strategy to manipulate the crystallographic orientation of GaN NWs in a VLS-HVPE process.

Nanoscale lithography of graphene with crystallographic orientation control

2012 ◽  
Vol 44 (6) ◽  
pp. 971-975 ◽  
Author(s):  
G. Dobrik ◽  
P. Nemes-Incze ◽  
L. Tapasztó ◽  
Ph. Lambin ◽  
L.P. Biró
Keyword(s):  
Crystallographic Orientation ◽  
Orientation Control

Catalyst-Directed Crystallographic Orientation Control of GaN Nanowire Growth

Nano Letters ◽  
2014 ◽  
Vol 14 (12) ◽  
pp. 6767-6773 ◽  
Author(s):  
Tevye R. Kuykendall ◽  
M. Virginia P. Altoe ◽  
D. Frank Ogletree ◽  
Shaul Aloni
Keyword(s):  
Crystallographic Orientation ◽  
Nanowire Growth ◽  
Orientation Control ◽  
Gan Nanowire

Two-Step Laser Recrystallization of Silicon Stripes in Sio2 Grooves for Crystallographic Orientation Control

1984 ◽  
Vol 35 ◽  
Author(s):  
K. Egami ◽  
M. Kimura ◽  
T. Hamaguchi ◽  
N. Endo
Keyword(s):  
Crystallographic Orientation ◽  
Laser Power ◽  
Dwell Time ◽  
Texture Formation ◽  
Molten State ◽  
Seed Formation ◽  
Orientation Control ◽  
Laser Recrystallization ◽  
Ion Laser ◽  
Lateral Epitaxy

ABSTRACTWe demonstrate a new two step laser recrystallization for crystallographic orientation control. In the cw Ar ion laser recrystallization of silicon stripes in the structure consisting of SiO2 grooves/polycrystalline Si sublayer/backing substrates, first, one edge of poly-Si stripes is intentionally recrystallized under relatively low laser power and a long dwell time in order to form a strong <100> texture with lamellar grains, second, poly-Si stripes are fully recrystallized using the above <100> texture as seed crystals by scanning a laser beam along the stripes. We discuss a strong <100> texture formation related to partially molten state in the first process of secondary seed formation, and use of a grooved structure with poly-Si sublayer suppressing edge nucleation during lateral epitaxy.

Location and Crystallographic Orientation Control of Si Grains through Combined Metal Induced Lateral Crystalization and µ-Czochralski Process

2008 ◽  
Vol 47 (3) ◽  
pp. 1880-1883 ◽  
Author(s):  
Chen Tao ◽  
Ryoichi Ishihara ◽  
Wim Metselaar ◽  
Kees Beenakker ◽  
Meng-Yue Wu
Keyword(s):  
Crystallographic Orientation ◽  
Orientation Control ◽  
Czochralski Process
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