Orientation Control and Properties of PZT Film Crystalized using Laser Annealing System

2016 ◽  
Vol 136 (12) ◽  
pp. 493-498 ◽  
Author(s):  
Junko Kazusa ◽  
Kazuhiro Koga ◽  
Norio Umeyama ◽  
Fumito Imura ◽  
Daiji Noda ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Orientation Control ◽  
Pzt Film

Crystallographic orientation control of silicon stripes in SiO2grooves using a new double laser annealing technique

1984 ◽  
Vol 44 (10) ◽  
pp. 962-964 ◽  
Author(s):  
Koji Egami ◽  
Masakazu Kimura ◽  
Tsuneo Hamaguchi
Keyword(s):  
Crystallographic Orientation ◽  
Laser Annealing ◽  
Orientation Control

Location and Orientation Control of Si Grain by Combining Metal-Induced Lateral Crystallization and Excimer Laser Annealing

2006 ◽  
Vol 45 (5B) ◽  
pp. 4347-4350 ◽  
Author(s):  
Naoyuki Higashi ◽  
Gou Nakagawa ◽  
Tanemasa Asano ◽  
Mitsutoshi Miyasaka ◽  
John Stoemenos
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Orientation Control ◽  
Lateral Crystallization

THE EFFECT OF LOCAL LASER ANNEALING ON THE MAGNETIC PROPERTIES OF AMORPHOUS RIBBONS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-1325-C8-1326
Author(s):  
P. Sánchez ◽  
M. C. Sánchez ◽  
E. López ◽  
M. García ◽  
C. Aroca
Keyword(s):  
Magnetic Properties ◽  
Laser Annealing ◽  
Amorphous Ribbons

Intensity-Modulated Excimer Laser Annealing to Obtain (001) Surface-Oriented Poly-Si Films on Glass: Molecular Dynamics Study

2008 ◽  
Author(s):  
Norie Matsubara ◽  
Tomohiko Ogata ◽  
Takanori Mitani ◽  
Shinji Munetoh ◽  
Teruaki Motooka
Keyword(s):  
Molecular Dynamics ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Intensity Modulated ◽  
Si Films

Laser Annealing of Te-Implanted III-V Semiconductors Studied by Mossbauer Spectroscopy

1980 ◽  
Vol 3 ◽  
Author(s):  
M. Van Rossum ◽  
I. Dezsi ◽  
G. Langouche ◽  
J. De Bruyn ◽  
R. Coussement
Keyword(s):  
Mössbauer Spectroscopy ◽  
Laser Annealing ◽  
Mossbauer Spectroscopy ◽  
Quadrupole Split ◽  
Annealing Behaviour ◽  
Mößbauer Spectroscopy ◽  
Annealing Procedure

ABSTRACTThe laser annealing behaviour of Te-implanted GaAs, GaSb, GaP and InP has been studied by Mössbauer Spectroscopy. The spectra of the as-implanted samples are characterized by a quadrupole split multiplet, showing that the Te ions come to rest at non-substitutional lattice sites. The laser annealing is shown to shift the implanted impurities towards substitutional positions. The efficiency of the laser annealing procedure is very similar for all lattices under study.

Short Channel Poly-Si TFT with Single Grain Boundary by Excimer Laser Annealing on Al-masked a-Si Layer

2002 ◽  
Vol 715 ◽  
Author(s):  
Sang-Hoon Jung ◽  
Jae-Hoon Lee ◽  
Min-Koo Han
Keyword(s):  
Grain Boundary ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Silicon Layer ◽  
Silicon Thin Film ◽  
Short Channel ◽  
Excimer Laser Annealing ◽  
Boundary Density ◽  
Single Grain

AbstractA short channel polycrystalline silicon thin film transistor (poly-Si TFT), which has single grain boundary in the center of channel, is reported. The reported poly-Si TFT employs lateral grain growth method through aluminum patterns, which acts as a selective beam mask and a lateral heat sink during the laser irradiation, on an amorphous silicon layer. The electrical characteristics of the proposed poly-Si TFT have been considerably improved due to grain boundary density lowered. The reported short channel poly-Si TFT with single grain boundary exhibits high mobility as 222 cm2/Vsec and large on/off current ratio exceeding 1 × 108.

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