Determination of the Minority Carrier Surface Thermogeneration Rate in Metal-Oxide-Semiconductor Structures

Instruments and Experimental Techniques ◽

10.1007/s10786-005-0086-y ◽

2005 ◽

Vol 48 (4) ◽

pp. 498-502

Author(s):

G. V. Chucheva ◽

A. G. Zhdan ◽

G. A. Akhmedov ◽

N. F. Kukharskaya

Keyword(s):

Metal Oxide ◽

Minority Carrier ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Use of transient capacitance measurements for direct determination of minority‐carrier lifetime in low‐doped metal‐oxide‐semiconductor structures

Applied Physics Letters ◽

10.1063/1.95008 ◽

1984 ◽

Vol 45 (1) ◽

pp. 52-53 ◽

Author(s):

U. Efron ◽

P. O. Braatz

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Direct Determination ◽

Minority Carrier Lifetime ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Capacitance Measurements ◽

Semiconductor Structures ◽

Transient Capacitance

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A method of determining minority carrier lifetime and doping level profiles of low‐doped metal‐oxide‐semiconductor structures using pulsed photoinjection

Journal of Applied Physics ◽

10.1063/1.329501 ◽

1981 ◽

Vol 52 (9) ◽

pp. 5659-5664 ◽

Author(s):

U. Efron ◽

J. Grinberg

Keyword(s):

Metal Oxide ◽

Doping Level ◽

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Accurate determination of shallow doping profiles and interface states for metal–oxide–semiconductor structures from measured capacitance–voltage data

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587122 ◽

1994 ◽

Vol 12 (1) ◽

pp. 342 ◽

Author(s):

A. L. M. Osse

Keyword(s):

Metal Oxide ◽

Accurate Determination ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage ◽

Doping Profiles

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Determination of hole effective mass in SiO2 and SiC conduction band offset using Fowler–Nordheim tunneling characteristics across metal-oxide-semiconductor structures after applying oxide field corrections

Journal of Applied Physics ◽

10.1063/1.3587185 ◽

2011 ◽

Vol 109 (10) ◽

pp. 104508 ◽

Author(s):

Ravi Kumar Chanana

Keyword(s):

Metal Oxide ◽

Effective Mass ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Band Offset ◽

Hole Effective Mass ◽

Conduction Band Offset ◽

Semiconductor Structures ◽

Nordheim Tunneling

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Determination of the threshold voltage in sodium-doped metal-oxide-semiconductor structures

Physical Review B ◽

10.1103/physrevb.43.4495 ◽

1991 ◽

Vol 43 (5) ◽

pp. 4495-4498 ◽

Author(s):

Dragana Popović ◽

A. B. Fowler ◽

P. J. Stiles

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric

Applied Physics Letters ◽

10.1063/1.2357566 ◽

2006 ◽

Vol 89 (13) ◽

pp. 132103 ◽

Author(s):

Y. Xuan ◽

P. D. Ye ◽

H. C. Lin ◽

G. D. Wilk

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Minority Carrier ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Al2o3 Gate Dielectric

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Spatially Resolved Transport Studies and Microscopy of Ultrathin Metal-Oxide-Semiconductor Structures

10.21236/ada329531 ◽

1997 ◽

Author(s):

R. Ludeke

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Spatially Resolved ◽

Transport Studies

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Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Applied Physics Letters ◽

10.1063/1.4907861 ◽

2015 ◽

Vol 106 (5) ◽

pp. 051605 ◽

Author(s):

Shenghou Liu ◽

Shu Yang ◽

Zhikai Tang ◽

Qimeng Jiang ◽

Cheng Liu ◽

...

Keyword(s):

Metal Oxide ◽

Interfacial Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Towards a first-principles simulation and current-voltage characteristic of atomistic metal-oxide–semiconductor structures

Physical Review B ◽

10.1103/physrevb.64.125306 ◽

2001 ◽

Vol 64 (12) ◽

Author(s):

Alexander A. Demkov ◽

Xiaodong Zhang ◽

D. A. Drabold

Keyword(s):

Metal Oxide ◽

First Principles ◽

Voltage Characteristic ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Voltage Characteristic ◽

Semiconductor Structures ◽

Current Voltage

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Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

Materials Science Forum ◽

10.4028/www.scientific.net/msf.389-393.1009 ◽

2002 ◽

Vol 389-393 ◽

pp. 1009-1012 ◽

Author(s):

Masahito Yoshikawa ◽

Mirei Satoh ◽

Takeshi Ohshima ◽

Hisayoshi Itoh

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Semiconductor Structures

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