Carrier trapping in room‐temperature, time‐resolved photoluminescence of a GaAs/AlxGa1−xAs multiple quantum well structure grown by metalorganic chemical vapor deposition

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

Time Resolved ◽

Time Resolved Photoluminescence ◽

Temperature Time ◽

Continuous room‐temperature multiple‐quantum‐well AlxGa1−xAs‐GaAs injection lasers grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.91206 ◽

1979 ◽

Vol 35 (7) ◽

pp. 487-489 ◽

Cited By ~ 29

Author(s):

R. D. Dupuis ◽

P. D. Dapkus ◽

N. Holonyak ◽

R. M. Kolbas

Keyword(s):

Quantum Well ◽

Vapor Deposition ◽

Room Temperature ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

Injection Lasers ◽

Room-temperature optically pumped AlGaN-AlN multiple-quantum-well lasers operating at <260nm grown by metalorganic chemical vapor deposition

10.1117/12.2008830 ◽

2013 ◽

Author(s):

Zachary Lochner ◽

Tsung-Ting Kao ◽

Yuh-Shiuan Liu ◽

Xiao-Hang Li ◽

Md. Mahbub Satter ◽

...

Keyword(s):

Quantum Well ◽

Vapor Deposition ◽

Room Temperature ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

Optically Pumped ◽

Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

Applied Physics Letters ◽

10.1063/1.4841755 ◽

2013 ◽

Vol 103 (23) ◽

pp. 231108 ◽

Cited By ~ 3

Author(s):

A. M. Hosalli ◽

D. M. Van Den Broeck ◽

D. Bharrat ◽

N. A. El-Masry ◽

S. M. Bedair

Keyword(s):

Gallium Nitride ◽

Quantum Well ◽

Vapor Deposition ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

Light Emitting ◽

STRUCTURAL AND OPTICAL PROPERTIES OF InGaN/GaN MULTIPLE QUANTUM WELL LIGHT EMITTING DIODES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION

III-Nitride Devices and Nanoengineering ◽

10.1142/9781848162242_0003 ◽

2008 ◽

pp. 57-88

Author(s):

Zhe Chuan Feng ◽

Jer-Ren Yang ◽

Alan Gang Li ◽

Ian T. Ferguson

Keyword(s):

Optical Properties ◽

Vapor Deposition ◽

Light Emitting Diodes ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

Light Emitting ◽

Time-resolved photoluminescence studies of GaN, InGaN, and AlGaN grown by metalorganic chemical vapor deposition

10.1117/12.349308 ◽

1999 ◽

Cited By ~ 2

Author(s):

Yong-Hoon Cho ◽

Gordon H. Gainer ◽

Jin-Joo Song ◽

Sarah L. Keller ◽

Umesh K. Mishra ◽

...

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

Time Resolved ◽

Photoluminescence Studies ◽

Time Resolved Photoluminescence ◽

Analysis of the in-plane bandgap distribution in selectively grown InGaAs/InGaAsP multiple quantum well by low pressure metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91060-x ◽

1994 ◽

Vol 145 (1-4) ◽

pp. 256-262 ◽

Cited By ~ 14

Author(s):

T. Itagaki ◽

T. Kimura ◽

K. Goto ◽

Y. Mihashi ◽

S. Takamiya ◽

...

Keyword(s):

Quantum Well ◽

Vapor Deposition ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Low Pressure ◽

Multiple Quantum ◽

GaInNAs/GaAs Multiple-Quantum-Well Grown by Metalorganic Chemical Vapor Deposition Using Nitrogen Carrier Gas

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.1511 ◽

2003 ◽

Vol 42 (Part 1, No. 4A) ◽

pp. 1511-1513 ◽

Cited By ~ 4

Author(s):

Tetsuo Nishida ◽

Mitsuru Takaya ◽

Takeo Kaneko ◽

Tatsuya Shimoda

Keyword(s):

Quantum Well ◽

Vapor Deposition ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

Carrier Gas ◽

High Al-Content Visible (AlGa)As Multiple Quantum Well Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.22.l727 ◽

1983 ◽

Vol 22 (Part 2, No. 11) ◽

pp. L727-L729 ◽

Cited By ~ 5

Author(s):

Hiroji Kawai ◽

Osamu Matsuda ◽

Kunio Kaneko

Keyword(s):

Quantum Well ◽

Vapor Deposition ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

Al Content ◽

High Al Content ◽

Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/s0022-0248(00)00692-8 ◽

2000 ◽

Vol 221 (1-4) ◽

pp. 240-245 ◽

Cited By ~ 1

Author(s):

Ho Ki Kwon ◽

C.J Eiting ◽

D.J.H Lambert ◽

M.M Wong ◽

B.S Shelton ◽

...

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

Time Resolved ◽

Photoluminescence Study ◽

Time Resolved Photoluminescence ◽

Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition

10.1117/12.741718 ◽

2007 ◽

Cited By ~ 1

Author(s):

Z. S. Lee ◽

Z. C. Feng ◽

A. G. Li ◽

H. L. Tsai ◽

J. R. Yang ◽

...

Keyword(s):

Quantum Well ◽

Vapor Deposition ◽

Structural Investigation ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

Light Emitting ◽