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STRUCTURAL AND OPTICAL PROPERTIES OF InGaN/GaN MULTIPLE QUANTUM WELL LIGHT EMITTING DIODES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION
III-Nitride Devices and Nanoengineering
◽
10.1142/9781848162242_0003
◽
2008
◽
pp. 57-88
Author(s):
Zhe Chuan Feng
◽
Jer-Ren Yang
◽
Alan Gang Li
◽
Ian T. Ferguson
Keyword(s):
Optical Properties
◽
Chemical Vapor Deposition
◽
Vapor Deposition
◽
Metalorganic Chemical Vapor Deposition
◽
Light Emitting Diodes
◽
Multiple Quantum Well
◽
Chemical Vapor
◽
Multiple Quantum
◽
Light Emitting
◽
Metalorganic Chemical
Download Full-text
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