Defect reduction in GaAs grown by molecular beam epitaxy using different superlattice structures

1986 ◽  
Vol 49 (15) ◽  
pp. 942-944 ◽  
Author(s):  
S. M. Bedair ◽  
T. P. Humphreys ◽  
N. A. El‐Masry ◽  
Y. Lo ◽  
N. Hamaguchi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Reduction ◽  
Superlattice Structures

Microstructural defect reduction in HgCdTe grown by photoassisted molecular‐beam epitaxy

1990 ◽  
Vol 8 (2) ◽  
pp. 1013-1019 ◽  
Author(s):  
K. A. Harris ◽  
T. H. Myers ◽  
R. W. Yanka ◽  
L. M. Mohnkern ◽  
R. W. Green ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Reduction ◽  
Microstructural Defect

scholarly journals Defect reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy

2002 ◽  
Vol 80 (2) ◽  
pp. 216-218 ◽  
Author(s):  
D. Huang ◽  
M. A. Reshchikov ◽  
F. Yun ◽  
T. King ◽  
A. A. Baski ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Reduction ◽  
Sapphire Substrates

Epitaxial growth and self-organized superlattice structures in AlGaN films grown by plasma assisted molecular beam epitaxy

2001 ◽  
Vol 87 (3) ◽  
pp. 227-236 ◽  
Author(s):  
E. Iliopoulos ◽  
K.F. Ludwig ◽  
T.D. Moustakas ◽  
Ph. Komninou ◽  
Th. Karakostas ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Self Organized ◽  
Superlattice Structures

scholarly journals Defect reduction in ZnSe grown by molecular beam epitaxy on GaAs substrates cleaned using atomic hydrogen

1996 ◽  
Vol 69 (1) ◽  
pp. 82-84 ◽  
Author(s):  
Zhonghai Yu ◽  
S. L. Buczkowski ◽  
N. C. Giles ◽  
T. H. Myers
Keyword(s):  
Molecular Beam Epitaxy ◽  
Atomic Hydrogen ◽  
Molecular Beam ◽  
Defect Reduction ◽  
Gaas Substrates

The Superlattice Diffusion Probe: A Tool for Modeling Diffusion in III-V Semiconductors

1991 ◽  
Vol 240 ◽  
Author(s):  
E. L. Allen ◽  
C. J. Pass ◽  
M. D. Deal ◽  
J. D. Plummer ◽  
V. F. K. Chia
Keyword(s):  
Molecular Beam Epitaxy ◽  
Fermi Level ◽  
Interdiffusion Coefficient ◽  
Molecular Beam ◽  
Significant Enhancement ◽  
Superlattice Structures ◽  
Level Effect

ABSTRACTUndoped AlAs/AlxGa1−xAs superlattice structures were grown by molecular beam epitaxy and annealed under Si3N4, SiO2 or WNX encapsulant films, both with and without the presence of implanted Sn. Enhancement of the Al-Ga interdiffusion coefficient occurred under the Si3N4 film due to in-diffusion of Si. Enhancement was even greater during diffusion of the Sn implant under both Si3N4 and SiO2. Underneath the WNX film, however, interdiffusion was suppressed even in the presence of Sn. We simulated these results with SUPREM IV and show that both the Fermi level effect and vacancy injection from the cap are necessary to cause significant enhancement of Al-Ga superlattice disordering.

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