Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy

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Vol 39 (Part 2, No. 2B) ◽  
pp. L143-L145 ◽  
Author(s):  
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Shugo Nitta ◽  
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Yohei Yukawa ◽  
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pp. 222102 ◽  
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pp. 872-873 ◽  
Author(s):  
D. Grützmacher ◽  
K. Wolter ◽  
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P. Balk ◽  
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Vol 54 (10) ◽  
pp. 922-924 ◽  
Author(s):  
S. K. Haywood ◽  
E. T. R. Chidley ◽  
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Vol 55 (4) ◽  
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Author(s):  
M. A. Ladugin ◽  
A. Yu. Andreev ◽  
I. V. Yarotskaya ◽  
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