Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy
2000 ◽
Vol 39
(Part 2, No. 2B)
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pp. L143-L145
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2006 ◽
Vol 35
(4)
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pp. 744-749
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Keyword(s):
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2000 ◽
Vol 159-160
◽
pp. 414-420
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Keyword(s):
2003 ◽
Vol 248
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pp. 494-497
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Keyword(s):