Hydrogen-terminated diamond field-effect transistor with a bilayer dielectric of HfSiON/Al2O3
2020 ◽
Vol 10
(3)
◽
pp. 035327
Jibran Hussain
◽
Haris Naeem Abbasi
◽
Wei Wang
◽
Yan-Feng Wang
◽
Ruozheng Wang
◽
...
2016 ◽
Vol 704
◽
pp. 012017
◽
A Dey
◽
A Singh
◽
A Kalita
◽
D Das
◽
P K Iyer
2009 ◽
Vol 56
(3)
◽
pp. 370-376
◽
Liwei Shang
◽
Ming Liu
◽
Deyu Tu
◽
Ge Liu
◽
Xinghua Liu
◽
...
2019 ◽
Vol 99
◽
pp. 107530
◽
Yan-Feng Wang
◽
Wei Wang
◽
Xiaohui Chang
◽
Feng Wen
◽
Haris Naeem Abbasi
◽
...
2015 ◽
Vol 26
(10)
◽
pp. 7948-7954
◽
Xiaolong Li
◽
Wei Shi
◽
Xinge Yu
◽
Junsheng Yu
2019 ◽
Vol 139
(3)
◽
pp. 207-210
2010 ◽
Vol E93-C
(5)
◽
pp. 540-545
◽
Dong Seup LEE
◽
Hong-Seon YANG
◽
Kwon-Chil KANG
◽
Joung-Eob LEE
◽
Jung Han LEE
◽
...
2014 ◽
Vol E97.C
(7)
◽
pp. 677-682
Sung YUN WOO
◽
Young JUN YOON
◽
Jae HWA SEO
◽
Gwan MIN YOO
◽
Seongjae CHO
◽
...
2019 ◽
Vol 24
(4)
◽
pp. 407-414
Oksana V. Gubanova
◽
◽
Evgeniy V. Kuznetsov
◽
Elena N. Rybachek
◽
Alexander N. Saurov
◽
...
2011 ◽
Vol 1
(4)
◽
pp. 56-60
Andrew M. Dorsey
◽
Matthew H. Ervin