The
electrical conductivity and porosity of the 2-dimensional metal-organic
framework Cu<sub>3</sub>(2,3,6,7,10,11-hexahydroxytriphenylene)<sub>2</sub> [Cu<sub>3</sub>(HHTP)<sub>2</sub>]
make it a promising candidate for thermoelectric applications. In this work, we
report the electrochemical synthesis of Cu<sub>3</sub>(HHTP)<sub>2</sub> films by
an anodization approach and an evaluation of its thermoelectric properties. The
electrochemically synthesised Cu<sub>3</sub>(HHTP)<sub>2</sub> thin films were
transferred using a wet chemical method in order to perform electrical
measurements. We are reporting the first thermoelectric measurements of this framework
both in bulk and thin film form which resulted in Seebeck coefficients of -7.24
µV/K and -121.4 µV/K with a power factor of 3.15x10<sup>-3</sup> µW m<sup>-1</sup> for the film respectively. The
negative Seebeck coefficients suggest that Cu<sub>3</sub>(HHTP)<sub>2</sub>
behaves as an n-type semiconductor.
Erratum: “Signature of p-type semiconductor features in paper-based back gate metal-organic framework thin-film transistors” [Appl. Phys. Lett. 117, 093303 (2020)]
