scholarly journals Conduction band offset-dependent induced threshold voltage shifts in a-InGaZnO TFTs under positive bias illumination stress

AIP Advances ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 035312
Author(s):  
Hyojung Kim ◽  
Soonkon Kim ◽  
Jongmin Yoo ◽  
Changyong Oh ◽  
Bosung Kim ◽  
...  
Keyword(s):  
Conduction Band ◽  
Threshold Voltage ◽  
Band Offset ◽  
Positive Bias ◽  
Conduction Band Offset

Deep trap characterisation and conduction band offset determination of AI0.48In0.52As/(Ga0.7AI0.3)0.48In0.52As heterostructures

1997 ◽  
Vol 13 (11) ◽  
pp. 971-973 ◽  
Author(s):  
F. Ducroquet ◽  
G. Jacovetti ◽  
K. Rezzoug ◽  
S. Ababou ◽  
G. Guillot ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Trap ◽  
Band Offset ◽  
Conduction Band Offset

The Influence of Conduction Band Offset on CdTe Solar Cells

2017 ◽  
Vol 47 (2) ◽  
pp. 1201-1207 ◽  
Author(s):  
Yunfei Chen ◽  
Xuehai Tan ◽  
Shou Peng ◽  
Cao Xin ◽  
Alan E. Delahoy ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conduction Band ◽  
Band Offset ◽  
Conduction Band Offset ◽  
Cdte Solar Cells

Local conduction band offset of GaSb self-assembled quantum dots on GaAs

1997 ◽  
Vol 70 (12) ◽  
pp. 1590-1592 ◽  
Author(s):  
M. E. Rubin ◽  
H. R. Blank ◽  
M. A. Chin ◽  
H. Kroemer ◽  
V. Narayanamurti
Keyword(s):  
Quantum Dots ◽  
Conduction Band ◽  
Band Offset ◽  
Conduction Band Offset ◽  
Self Assembled

Conduction band offset for Ga0.62In0.38NxAs0.991−xSb0.009∕GaNyAs1−y∕GaAs systems with the ground state transition at 1.5–1.65μm

2007 ◽  
Vol 90 (13) ◽  
pp. 131905 ◽  
Author(s):  
R. Kudrawiec ◽  
S. R. Bank ◽  
H. B. Yuen ◽  
H. Bae ◽  
M. A. Wistey ◽  
...  
Keyword(s):  
Conduction Band ◽  
Ground State ◽  
State Transition ◽  
Band Offset ◽  
Ground State Transition ◽  
Conduction Band Offset

Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

2006 ◽  
Vol 957 ◽  
Author(s):  
Yahya Alivov ◽  
Xiao Bo ◽  
Fan Qian ◽  
Daniel Johnstone ◽  
Cole Litton ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Offset ◽  
Measured Temperature ◽  
Temperature Dependent ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTThe conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

Sign in / Sign up

Export Citation Format

Share Document