scholarly journals Gap-protected transfer of topological defect states in photonic lattices

APL Photonics ◽  
2021 ◽  
Vol 6 (3) ◽  
pp. 030803
Author(s):  
Jiale Yuan ◽  
Chenran Xu ◽  
Han Cai ◽  
Da-Wei Wang
2D Materials ◽  
2017 ◽  
Vol 4 (2) ◽  
pp. 025008 ◽  
Author(s):  
Charles Poli ◽  
Henning Schomerus ◽  
Matthieu Bellec ◽  
Ulrich Kuhl ◽  
Fabrice Mortessagne

Author(s):  
Aboutaleb Amiri ◽  
Romain Mueller ◽  
Amin Doostmohammadi

Abstract The presence and significance of active topological defects is increasingly realised in diverse biological and biomimetic systems. We introduce a continuum model of polar active matter, based on conservation laws and symmetry arguments, that recapitulates both polar and apolar (nematic) features of topological defects in active turbulence. Using numerical simulations of the continuum model, we demonstrate the emergence of both half- and full-integer topological defects in polar active matter. Interestingly, we find that crossover from active turbulence with half- to full-integer defects can emerge with the coexistence region characterized by both defect types. These results put forward a minimal, generic framework for studying topological defect patterns in active matter which is capable of explaining the emergence of half-integer defects in polar systems such as bacteria and cell monolayers, as well as predicting the emergence of coexisting defect states in active matter.


Author(s):  
S. Wittek ◽  
M. Parto ◽  
H. Hodaei ◽  
G. Harari ◽  
M. Bandres ◽  
...  

2003 ◽  
Vol 766 ◽  
Author(s):  
V. Ligatchev ◽  
T.K.S. Wong ◽  
T.K. Goh ◽  
Rusli Suzhu Yu

AbstractDefect spectrum N(E) of porous organic dielectric (POD) films is studied with capacitance deep-level-transient-spectroscopy (C-DLTS) in the energy range up to 0.7 eV below conduction band bottom Ec. The POD films were prepared by spin coating onto 200mm p-type (1 – 10 Δcm) single-side polished silicon substrates followed by baking at 325°C on a hot plate and curing at 425°C in furnace. The film thickness is in the 5000 – 6000 Å range. The ‘sandwich’ -type NiCr/POD/p-Si/NiCr test structures showed both rectifying DC current-voltage characteristics and linear 1/C2 vs. DC reverse bias voltage. These confirm the applicability of the C-DLTS technique for defect spectrum deconvolution and the n-type conductivity of the studied films. Isochronal annealing (30 min in argon or 60 min in nitrogen) has been performed over the temperature range 300°C - 650°C. The N(E) distribution is only slightly affected by annealing in argon. However, the distribution depends strongly on the annealing temperature in nitrogen ambient. A strong N(E) peak at Ec – E = 0.55 – 0.60 eV is detected in all samples annealed in argon but this peak is practically absent in samples annealed in nitrogen at Ta < 480°C. On the other hand, two new peaks at Ec – E = 0.12 and 0.20 eV appear in the N(E) spectrum of the samples annealed in nitrogen at Ta = 650°C. The different features of the defect spectrum are attributed to different interactions of argon and nitrogen with dangling carbon bonds on the intra-pore surfaces.


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