Topological defect states in mesoscopic superconductors with mixed pairing symmetries

2021 ◽  
Vol 94 (9) ◽  
Author(s):  
Rui-Feng Chai ◽  
Guo-Qiao Zha
2D Materials ◽  
2017 ◽  
Vol 4 (2) ◽  
pp. 025008 ◽  
Author(s):  
Charles Poli ◽  
Henning Schomerus ◽  
Matthieu Bellec ◽  
Ulrich Kuhl ◽  
Fabrice Mortessagne

Author(s):  
Aboutaleb Amiri ◽  
Romain Mueller ◽  
Amin Doostmohammadi

Abstract The presence and significance of active topological defects is increasingly realised in diverse biological and biomimetic systems. We introduce a continuum model of polar active matter, based on conservation laws and symmetry arguments, that recapitulates both polar and apolar (nematic) features of topological defects in active turbulence. Using numerical simulations of the continuum model, we demonstrate the emergence of both half- and full-integer topological defects in polar active matter. Interestingly, we find that crossover from active turbulence with half- to full-integer defects can emerge with the coexistence region characterized by both defect types. These results put forward a minimal, generic framework for studying topological defect patterns in active matter which is capable of explaining the emergence of half-integer defects in polar systems such as bacteria and cell monolayers, as well as predicting the emergence of coexisting defect states in active matter.


Author(s):  
S. Wittek ◽  
M. Parto ◽  
H. Hodaei ◽  
G. Harari ◽  
M. Bandres ◽  
...  

APL Photonics ◽  
2021 ◽  
Vol 6 (3) ◽  
pp. 030803
Author(s):  
Jiale Yuan ◽  
Chenran Xu ◽  
Han Cai ◽  
Da-Wei Wang

2003 ◽  
Vol 766 ◽  
Author(s):  
V. Ligatchev ◽  
T.K.S. Wong ◽  
T.K. Goh ◽  
Rusli Suzhu Yu

AbstractDefect spectrum N(E) of porous organic dielectric (POD) films is studied with capacitance deep-level-transient-spectroscopy (C-DLTS) in the energy range up to 0.7 eV below conduction band bottom Ec. The POD films were prepared by spin coating onto 200mm p-type (1 – 10 Δcm) single-side polished silicon substrates followed by baking at 325°C on a hot plate and curing at 425°C in furnace. The film thickness is in the 5000 – 6000 Å range. The ‘sandwich’ -type NiCr/POD/p-Si/NiCr test structures showed both rectifying DC current-voltage characteristics and linear 1/C2 vs. DC reverse bias voltage. These confirm the applicability of the C-DLTS technique for defect spectrum deconvolution and the n-type conductivity of the studied films. Isochronal annealing (30 min in argon or 60 min in nitrogen) has been performed over the temperature range 300°C - 650°C. The N(E) distribution is only slightly affected by annealing in argon. However, the distribution depends strongly on the annealing temperature in nitrogen ambient. A strong N(E) peak at Ec – E = 0.55 – 0.60 eV is detected in all samples annealed in argon but this peak is practically absent in samples annealed in nitrogen at Ta < 480°C. On the other hand, two new peaks at Ec – E = 0.12 and 0.20 eV appear in the N(E) spectrum of the samples annealed in nitrogen at Ta = 650°C. The different features of the defect spectrum are attributed to different interactions of argon and nitrogen with dangling carbon bonds on the intra-pore surfaces.


1982 ◽  
Vol 47 (7) ◽  
pp. 1787-1793 ◽  
Author(s):  
Miloslav Frumar ◽  
Gustáv Plesch ◽  
Eva Černošková ◽  
Václav Černý ◽  
Ladislav Tichý ◽  
...  

Glasses of the GexS100-x system were studied in the region of 30 ⪬ x ⪬ 45. The concept of magnetically active defect centres was employed to account for the EPR spectra of pure samples as well as those doped with silver or iodine, prepared in different temperature conditions. In terms of this concept a consistent interpretation of the experimental data could be given for the composition region applied.


1997 ◽  
Vol 36 (Part 1, No. 10) ◽  
pp. 6226-6229 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Jun-Wei Tsai ◽  
Chun-Yao Huang ◽  
Fang-Chen Luo ◽  
Hsing-Chien Tuan

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