Optical detected magnetic resonance of nitrogen-vacancy centers in vertical diamond Schottky diode

Diamond solid-state devices are very attractive to electrically control the charge state of Nitrogen-Vacancy (NV) centers. In this work, Vertical p-type Diamond Schottky Diode (VDSDs) is introduced as a platform to electrically control the interconversion between the neutral charge NV (NV0) and negatively charged NV (NV-) centers. The photoluminescence (PL) of NV centers generated by ion-implantation in VDSDs shows the increase of NV- Zero Phonon Line (ZPL) and phonon sideband (PBS) intensities with the reverse voltage, whereas the NV0 ZPL intensity decreases. Thus, NV centers embedded into VDSDs are converted into NV- under reverse bias voltage. Moreover, the optically detected magnetic resonance (ODMR) of NV- exhibits an increase in the ODMR contrast with the reverse bias voltage and splitting of the resonance dips. Since no magnetic is applied, such a dip splitting in ODMR spectrum is ascribed the Stark effect induced by the interaction of NV- with the electric field existing within the depletion region of VDSDs.

Annealing Effect on the SnSe Nanocrystalline Thin Films and the Photovoltaic Properties of the p-SnSe/n-Si Heterojunction Solar Cells

A thin film of SnSe were deposited by thermal evaporation technique on 400 ±20 nm thick glass substrates of these films were annealed at different temperatures (100,150,200 ⁰C), The effect of annealing on the characteristics of the nano crystalline SnSe thin films was investigated using XRD, UV-VIS absorption spectroscopy, Atomic Force Microscope (AFM), and Hall effect measurements. The results of X-ray displayed that all the thin films have polycrystalline and orthorhombic structure in nature, while UV-VIS study showed that the SnSe has direct band gap of nano crystalline and it is changed from 60.12 to 94.70 nm with increasing annealing temperature. Hall effect measurements showed that all the films have a positive Hall coefficient, which means that the conductivity of the films is p-type. The conductivity of SnSe films was increased with increasing annealing temperatures (except that at 200⁰C). The I-V characteristics under illumination for the "p-SnSe/n-Si” solar cell displayed an increase in conversion efficiency with increasing annealing temperature from R.T to 150⁰C, while at 200⁰C, this efficiency was decreased. The measurements of the C-V characteristics displayed that all junctions were abrupt type. It is clear from C-V measurements that the capacitance decreased with increasing reverse bias voltage which leads to an increase in the depletion width.

Physical Processes during the Formation of Silicon-Lithium p-i-n Structures Using Double-Sided Diffusion and Drift Methods

In this paper, we described a method of double-sided diffusion and drift of lithium-ions into monocrystalline silicon for the formation of the large-sized, p-i-n structured Si(Li) radiation detectors. The p-i-n structure is a p-n junction with a doped region, where the “i-region” is between the n and the p layers. A well-defined i-region is usually associated with p or n layers with high resistivities. The p-i-n structure is mostly used in diodes and in some types of semiconductor radiation detectors. The uniqueness of this method is that, in this method, the processes of diffusion and drift of lithium-ions, which are the main processes in the formation of Si(Li) p-i-n structures, are produced from both flat sides of cylindrical-shaped monocrystalline silicon, at optimal temperature (T = 420 °C) conditions of diffusion, and subsequently, with synchronous supply of temperature (from 55 to 100 °C) and reverse bias voltage (from 70 to 300 V) during drift of lithium-ions into silicon. Thus, shortening the manufacturing time of the detector and providing a more uniform distribution of lithium-ions in the crystal volume. Since, at present, the development of manufacturing of large-sized Si(Li) detectors is hindered due to difficulties in obtaining a uniformly compensated large area and time-consuming manufacturing process, the proposed method may open up new possibilities in detector manufacturing.

Measurement of Ion Energy Distribution and Deposition of Ti Thin Films Using ABPPS Technology on Glass Substrate

Ion energy distributions (IEDs) play an important role in material processes and thin film deposition. We developed a newly designed multistep pulsed power supply (modulator) for the asymmetric bipolar pulsed power sputtering (ABPPS) technology and studied the effect of reverse bias voltage in improving the properties of thin films through Ti deposition. Using an ion energy analyzer, we confirmed IEDs and relative ion intensity under a reverse bias voltage of the modulator at the substrate position. A dense plasma was generated near the sputter target at reverse bias voltages above 300 V. Experiments were conducted by varying the bias voltage applied to the sputter target and the duty cycle of the modulator. Our results demonstrate that the in-house-built ABPPS system can be used to clean the sample surfaces without requiring additional energy sources or substrate bias and that thin films prepared using this system have a smoother surface than those prepared by conventional sputtering.

Photoelectric Sensor Circuit and Image Segmentation Method for Radar System

In this exploration, based on the principle and system parameters of laser three-dimensional (3D) radar imaging technology, the corresponding photoelectric sensor circuit scheme is formulated. The sense circuit of avalanche photon diode (APD) converts the signal through the transresistance amplifier circuit. Then, LMH6629 is selected as a precision amplifier with low input noise voltage and low input error current. The capacitance is used as a compensation element to compensate the phase. For the power supply scheme, choosing the mode of switching power supply and LDO to work together can improve the efficiency of power supply and reduce the output of current ripple. At the same time, semantic segmentation is carried out for the obtained photoelectric images. Based on the traditional spatial pyramid pooling algorithm, the fusion of mean intersection over union and cross information entropy loss function is introduced to improve the weight of local image region. In the experiment, Multisim software is used to simulate the circuit. The APD reverse bias voltage is set to 90 V, and the multiplication coefficient is 98.7. The feedback resistance, bandwidth, phase compensation capacitance and other parameters are further calculated. It is found that there is obvious self-excited phenomenon in the output waveform of the transresistance amplifier without phase compensation capacitor. When the feedback capacitance reaches 0.8 pF, the oscillation phenomenon is obviously reduced; further calculation shows that the bandwidth of transresistance amplifier is 230 MHz, and the noise of APD power supply is mainly caused by BUCK switching power supply switch when the bottom noise of oscilloscope is ignored. However, the noise is suppressed under the action of the back-end LDO device; after the loss function is introduced, the contour of the photoelectric image is preserved completely, and then the more accurate segmentation results are obtained.

Enhanced image sensing with avalanche multiplication in hybrid structure of crystalline selenium photoconversion layer and CMOSFETs

The recent improvements of complementary metal–oxide–semiconductor (CMOS) image sensors are playing an essential role in emerging high-definition video cameras, which provide viewers with a stronger sensation of reality. However, the devices suffer from decreasing sensitivity due to the shrinkage of pixels. We herein address this problem by introducing a hybrid structure comprising crystalline-selenium (c-Se)-based photoconversion layers and 8 K resolution (7472 × 4320 pixels) CMOS field-effect transistors (FETs) to amplify signals using the avalanche multiplication of photogenerated carriers. Using low-defect-level NiO as an electric field buffer and an electron blocking layer, we confirmed signal amplification by a factor of approximately 1.4 while the dark current remained low at 2.6 nA/cm2 at a reverse bias voltage of 22.6 V. Furthermore, we successfully obtained a brighter image based on the amplified signals without any notable noise degradation.

Silicon Waveguide Integrated with Germanium Photodetector for a Photonic-Integrated FBG Interrogator

We report a vertically coupled germanium (Ge) waveguide detector integrated on silicon-on-insulator waveguides and an optimized device structure through the analysis of the optical field distribution and absorption efficiency of the device. The photodetector we designed is manufactured by IMEC, and the tests show that the device has good performance. This study theoretically and experimentally explains the structure of Ge PIN and the effect of the photodetector (PD) waveguide parameters on the performance of the device. Simulation and optimization of waveguide detectors with different structures are carried out. The device’s structure, quantum efficiency, spectral response, response current, changes with incident light strength, and dark current of PIN-type Ge waveguide detector are calculated. The test results show that approximately 90% of the light is absorbed by a Ge waveguide with 20 μm Ge length and 500 nm Ge thickness. The quantum efficiency of the PD can reach 90.63%. Under the reverse bias of 1 V, 2 V and 3 V, the detector’s average responsiveness in C-band reached 1.02 A/W, 1.09 A/W and 1.16 A/W and the response time is 200 ns. The dark current is only 3.7 nA at the reverse bias voltage of −1 V. The proposed silicon-based Ge PIN PD is beneficial to the integration of the detector array for photonic integrated arrayed waveguide grating (AWG)-based fiber Bragg grating (FBG) interrogators.

Design and Implementation of a Compact Single-Photon Counting Module

A compact single-photon counting module that can accurately control the bias voltage and hold-off time is developed in this work. The module is a microcontroller-based system which mainly consists of a microcontroller, a programmable negative voltage generator, a silicon-based single-photon avalanche diode, and an integrated active quench and reset circuit. The module is 3.8 cm × 3.6 cm × 2 cm in size and can communicate with the end user and be powered through a USB cable (5 V). In this module, the bias voltage of the single-photon avalanche diode (SPAD) is precisely controllable from −14 V ~ −38 V and the hold-off time (consequently the dead time) of the SPAD can be adjusted from a few nanoseconds to around 1.6 μs with a setting resolution of ∼6.5 ns. Experimental results show that the module achieves a minimum dead time of around 28.5 ns, giving a saturation counting rate of around 35 Mcounts/s. Results also show that at a controlled reverse bias voltage of 26.8 V, the dark count rate measured is about 300 counts/s and the timing jitter measured is about 158 ps. Photodetection probability measurements show that the module is suited for detection of visible light from 450 nm to 800 nm with a 40% peak photon detection efficiency achieved at around 600 nm.

Квантовый выход кремниевого лавинного фотодиода в диапазоне длин волн 120-170 nm

The external quantum yield of silicon avalanche photodiode in the wavelength range of 120-170 nm was performed. It was shown that the engineered avalanche photodiode has the external quantum yield of 24-150 electron/proton under reverse bias voltage of 230-345 V, respectively. The testing of worked out avalanche photodiode by means of pulse flash of 280 and 340 nm wavelength demonstrates the speed, corresponding to the bandwidth not less than 25 MHz.