High-performance reverse blocking p-GaN HEMTs with recessed Schottky and p-GaN isolation blocks drain

Haiyong Wang; Wei Mao; Shenglei Zhao; Beiluan Gao; Ming Du; Xuefeng Zheng; Chong Wang; Chunfu Zhang; Jincheng Zhang; Yue Hao

doi:10.1063/5.0054370

High-performance reverse blocking p-GaN HEMTs with recessed Schottky and p-GaN isolation blocks drain

Applied Physics Letters ◽

10.1063/5.0054370 ◽

2021 ◽

Vol 119 (2) ◽

pp. 023507

Author(s):

Haiyong Wang ◽

Wei Mao ◽

Shenglei Zhao ◽

Beiluan Gao ◽

Ming Du ◽

...

Keyword(s):

High Performance ◽

Reverse Blocking ◽

Gan Hemts

Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain

Superlattices and Microstructures ◽

10.1016/j.spmi.2021.106931 ◽

2021 ◽

pp. 106931

Author(s):

Haiyong Wang ◽

Wei Mao ◽

Shenglei Zhao ◽

Jiabo Chen ◽

Ming Du ◽

...

Keyword(s):

Reverse Blocking ◽

Gan Hemts

High-performance AlGaN/GaN HEMTs on silicon substrates

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem ◽

10.1109/asdam.2002.1088526 ◽

2003 ◽

Author(s):

P. Javorka ◽

A. Alam ◽

A. Fox ◽

M. Marso ◽

M. Heuken ◽

...

Keyword(s):

High Performance ◽

Silicon Substrates ◽

Gan Hemts

High-performance monolithically-integrated E/D mode InAlN/AlN/GaN HEMTs for mixed-signal applications

2010 International Electron Devices Meeting ◽

10.1109/iedm.2010.5703451 ◽

2010 ◽

Cited By ~ 8

Author(s):

Yong Tang ◽

Paul Saunier ◽

Ronghua Wang ◽

Andrew Ketterson ◽

Xiang Gao ◽

...

Keyword(s):

High Performance ◽

Mixed Signal ◽

Monolithically Integrated ◽

Gan Hemts

High Performance AlGaN/GaN Hemts on GaN Substrates

ECS Meeting Abstracts ◽

10.1149/ma2016-01/24/1225 ◽

2016 ◽

Keyword(s):

High Performance ◽

Gan Hemts

Short-term reliability of high performance Q-band AlN/GaN HEMTs

2020 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps45951.2020.9129322 ◽

2020 ◽

Author(s):

R. Kabouche ◽

K. Harrouche ◽

E. Okada ◽

F. Medjdoub

Keyword(s):

High Performance ◽

Short Term ◽

Gan Hemts

A high-performance GaN E-mode reverse blocking MISHEMT with MIS field effect drain for bidirectional switch

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) ◽

10.23919/ispsd.2017.7988924 ◽

2017 ◽

Cited By ~ 3

Author(s):

Yijun Shi ◽

Wanjun Chen ◽

Chao Liu ◽

Guanhao Hu ◽

Jie Liu ◽

...

Keyword(s):

Field Effect ◽

High Performance ◽

Reverse Blocking

High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape

IEEE Electron Device Letters ◽

10.1109/led.2010.2091251 ◽

2011 ◽

Vol 32 (2) ◽

pp. 143-145 ◽

Cited By ~ 33

Author(s):

M. Lesecq ◽

V. Hoel ◽

A. Lecavelier des Etangs-Levallois ◽

E. Pichonat ◽

Y. Douvry ◽

...

Keyword(s):

High Performance ◽

Gan Hemts

Impact ionization in high performance AlGaN/GaN HEMTs

Proceedings. IEEE Lester Eastman Conference on High Performance Devices ◽

10.1109/lechpd.2002.1146791 ◽

2003 ◽

Cited By ~ 20

Author(s):

B. Brar ◽

K. Boutros ◽

R.E. DeWarnes ◽

V. Tilak ◽

R. Shealy ◽

...

Keyword(s):

High Performance ◽

Impact Ionization ◽

Gan Hemts

High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE

2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573) ◽

10.1109/csics.2004.1392534 ◽

2005 ◽

Cited By ~ 2

Author(s):

M. Miyoshi ◽

A. Imanish ◽

H. Ishikawa ◽

T. Egawa ◽

K. Asai ◽

...

Keyword(s):

High Performance ◽

Gan Hemts

High Performance AlGaN/GaN HEMTs with Recessed Gate

Materials Science Forum ◽

10.4028/www.scientific.net/msf.389-393.1511 ◽

2002 ◽

Vol 389-393 ◽

pp. 1511-1514

Author(s):

Y. Sano ◽

J. Mita ◽

T. Yamada ◽

T. Makita ◽

K. Kaifu ◽

...

Keyword(s):

High Performance ◽

Gan Hemts ◽

Recessed Gate