Optimization of Schottky-contact process on 4H-SiC Junction Barrier Schottky (JBS) Diodes

SiC Junction Barrier Schottky (JBS) Rectifier is a kind of unipolar power diode with low threshold voltage and high reverse blocking voltage. And the Schottky barrier Φ BN is a main technology parameter, which could greatly affect the forward conduction power and reverse leakage current in the JBS rectifiers. Therefore, it is necessary to balance the influence of Φ BN on the electrical characteristics of JBS rectifiers. In this paper, physical properties at the metal-semiconductor at the Schottky-contact could be optimized by the improvement of Schottky-contact process. And this optimization could significantly decrease Φ BN to reduce the on-state voltage drop V F and minimize negative impact on its reverse characteristics. After the completion of Silicon carbide JBS diodes, the static parameter electrical test was carried out on the wafer by using Keysight B1505A Power Device Analyzer/Curve Tracer. The test results show that the Schottky barrier height Φ BN of JBS Schottky rectifier manufactured by the modified Schottky foundation technology decreased from 1.19eV to 0.99eV and I R increased from 1.08μA to 3.73μA (reverse blocking voltage V R=1200V). It indicated that the power consumption of Schottky barrier junction in JBS rectifiers could be significantly reduced by about 25%, and I R could effectively be limited to less than 10μA.

Design and Control of a Three-Phase T-Type Inverter using Reverse-Blocking IGBTs

This paper proposes the design and implementation of a 15kW three-phase T-type inverter. Fuji Electric's new generation IGBT module (V series) using RB-IGBT technology is applied for the converter, due to its higher efficiency from conventional IGBTs to reduce switching losses on the semiconductors. Under full load conditions, the overall efficiency of the converter can reach over 98%. The control design and sine PWM modulation are implemented on a DSP kit named TMS320F3F28379D. In addition, the PWM is generated with the fundamental and third harmonics of a sin wave, allowing a modulation factor up to 1,154 compared to traditional PWM. The output voltage of 220V/50Hz with less than 2% of THD can be achieved at the minimum input DC voltage of 550V.