scholarly journals Transferable room-temperature single-photon emitters in hexagonal boron nitride grown by molecular beam epitaxy

AIP Advances ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 115101
Author(s):  
Chao Lyu ◽  
Fang Liu ◽  
Zhihao Zang ◽  
Tingting Wang ◽  
Yanping Li ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Room Temperature ◽  
Molecular Beam ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Single Photon Emitters

scholarly journals First-Principles Identification of Single Photon Emitters Based on Carbon Clusters in Hexagonal Boron Nitride

2021 ◽  
Vol 125 (6) ◽  
pp. 1325-1335 ◽  
Author(s):  
Cesar Jara ◽  
Tomáš Rauch ◽  
Silvana Botti ◽  
Miguel A. L. Marques ◽  
Ariel Norambuena ◽  
...  
Keyword(s):  
Boron Nitride ◽  
First Principles ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Carbon Clusters ◽  
Single Photon Emitters

scholarly journals Effect of growth temperature on the structural and optical properties of few-layer hexagonal boron nitride by molecular beam epitaxy

2018 ◽  
Vol 26 (18) ◽  
pp. 23031 ◽  
Author(s):  
David Arto Laleyan ◽  
Kelsey Mengle ◽  
Songrui Zhao ◽  
Yongjie Wang ◽  
Emmanouil Kioupakis ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Hexagonal Boron Nitride ◽  
Structural And Optical Properties

scholarly journals Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Yong-Jin Cho ◽  
Alex Summerfield ◽  
Andrew Davies ◽  
Tin S. Cheng ◽  
Emily F. Smith ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
Hexagonal Boron Nitride ◽  
Graphite Substrate ◽  
Force Microscopy ◽  
Atomic Force

Abstract We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN has a resistance which increases exponentially with the number of layers, and has electrical properties comparable to exfoliated hBN. X-ray photoelectron spectroscopy, Raman microscopy and spectroscopic ellipsometry measurements on hBN confirm the formation of sp2-bonded hBN and a band gap of 5.9 ± 0.1 eV with no chemical intermixing with graphite. We also observe hexagonal moiré patterns with a period of 15 nm, consistent with the alignment of the hBN lattice and the graphite substrate.

Photoinduced Modification of Single-Photon Emitters in Hexagonal Boron Nitride

ACS Photonics ◽  
2016 ◽  
Vol 3 (12) ◽  
pp. 2490-2496 ◽  
Author(s):  
Zav Shotan ◽  
Harishankar Jayakumar ◽  
Christopher R. Considine ◽  
Mažena Mackoit ◽  
Helmut Fedder ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Single Photon Emitters

scholarly journals High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes

Materials ◽  
2018 ◽  
Vol 11 (7) ◽  
pp. 1119 ◽  
Author(s):  
Tin Cheng ◽  
Alex Summerfield ◽  
Christopher Mellor ◽  
Andrei Khlobystov ◽  
Laurence Eaves ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Molecular Beam ◽  
Hexagonal Boron Nitride ◽  
Active Nitrogen ◽  
Nitrogen Fluxes

scholarly journals Room-temperature single photon emitters in cubic boron nitride nanocrystals

2020 ◽  
Vol 10 (4) ◽  
pp. 843
Author(s):  
Gabriel I. López-Morales ◽  
Aziza Almanakly ◽  
Sitakanta Satapathy ◽  
Nicholas V. Proscia ◽  
Harishankar Jayakumar ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Room Temperature ◽  
Single Photon ◽  
Cubic Boron Nitride ◽  
Single Photon Emitters

scholarly journals Chemical Vapour Deposition of Hexagonal Boron Nitride for Two Dimensional Electronics

2018 ◽  
Vol 3 (3) ◽  
pp. 27-34 ◽  
Author(s):  
Balaji Sompalle ◽  
Jérôme Borme ◽  
Fátima Cerqueira ◽  
Tangyou Sun ◽  
Rui Campos ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Protective Coatings ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Chamber Pressure ◽  
Single Photon Emitters ◽  
Potential Applications ◽  
Grown Graphene

Hexagonal boron nitride (h-BN) has potential applications in protective coatings, single photon emitters and as substrate for graphene electronics. In this paper, we report on the growth of h-BN by chemical vapor deposition (CVD) using ammonia borane as the precursor. Use of CVD allows controlled synthesis over large areas defined by process parameters, e.g. temperature, time, process chamber pressure and gas partial pressures. Furthermore, independently grown graphene and h-BN layers are put together to realize enhancement in electronic properties of graphene.

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