Quantitative scanning microwave microscopy of 2D electron and hole gases in AlN/GaN heterostructures

2022 ◽  
Vol 120 (1) ◽  
pp. 012103
Author(s):  
Xiaopeng Wang ◽  
Gianluca Fabi ◽  
Reet Chaudhuri ◽  
Austin Hickman ◽  
Mohammad Javad Asadi ◽  
...  
2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.


Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 820
Author(s):  
François Piquemal ◽  
José Morán-Meza ◽  
Alexandra Delvallée ◽  
Damien Richert ◽  
Khaled Kaja

Reference samples are commonly used for the calibration and quantification of nanoscale electrical measurements of capacitances and dielectric constants in scanning microwave microscopy (SMM) and similar techniques. However, the traceability of these calibration samples is not established. In this work, we present a detailed investigation of most possible error sources that affect the uncertainty of capacitance measurements on the reference calibration samples. We establish a comprehensive uncertainty budget leading to a combined uncertainty of 3% in relative value (uncertainty given at one standard deviation) for capacitances ranging from 0.2 fF to 10 fF. This uncertainty level can be achieved even with the use of unshielded probes. We show that the weights of uncertainty sources vary with the values and dimensions of measured capacitances. Our work offers improvements on the classical calibration methods known in SMM and suggests possible new designs of reference standards for capacitance and dielectric traceable measurements. Experimental measurements are supported by numerical calculations of capacitances to reveal further paths for even higher improvements.


AIP Advances ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 035114
Author(s):  
Xianfeng Zhang ◽  
Zhe Wu ◽  
Quansong Lan ◽  
Zhiliao Du ◽  
Quanxin Zhou ◽  
...  

Author(s):  
Xiaopeng Wang ◽  
Kuanchen Xiong ◽  
Lei Li ◽  
James C. M. Hwang ◽  
Xin Jin ◽  
...  

2001 ◽  
Vol 79 (26) ◽  
pp. 4411-4413 ◽  
Author(s):  
K. S. Chang ◽  
M. Aronova ◽  
O. Famodu ◽  
I. Takeuchi ◽  
S. E. Lofland ◽  
...  

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