Mg doping and diffusion in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy

2021 ◽  
Vol 130 (23) ◽  
pp. 235301
Author(s):  
Akhil Mauze ◽  
Yuewei Zhang ◽  
Takeki Itoh ◽  
Thomas E. Mates ◽  
Hartwin Peelaers ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Mg Doping ◽  
And Diffusion

Control of Mg doping of GaN in RF-plasma molecular beam epitaxy

2005 ◽  
Vol 278 (1-4) ◽  
pp. 443-448 ◽  
Author(s):  
A. Feduniewicz ◽  
C. Skierbiszewski ◽  
M. Siekacz ◽  
Z.R. Wasilewski ◽  
I. Sproule ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Rf Plasma ◽  
Mg Doping

Minority carrier lifetime and diffusion length in HgTe/CdTe superlattices by molecular beam epitaxy

1992 ◽  
Vol 61 (10) ◽  
pp. 1196-1198 ◽  
Author(s):  
S. H. Shin ◽  
J. M. Arias ◽  
M. Zandian ◽  
J. G. Pasko ◽  
J. Bajaj ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Lifetime ◽  
And Diffusion

scholarly journals Optimization of p-type contacts to InGaN-based laser diodes and light emitting diodes grown by plasma assisted molecular beam epitaxy

2020 ◽  
Vol 50 (2) ◽  
Author(s):  
Krzesimir Nowakowski-Szkudlarek ◽  
Grzegorz Muziol ◽  
Mikolaj Żak ◽  
Mateusz Hajdel ◽  
Marcin Siekacz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Contact Layer ◽  
Light Emitting ◽  
Mg Doping ◽  
Current Voltage ◽  
Type Contact ◽  
Current Voltage Characteristics ◽  
P Type ◽  
Diode Current

We investigated the influence of the In0.17Ga0.83N:Mg contact layer grown by plasma assisted molecular beam epitaxy on the resistivity of p-type Ni/Au contacts. We demonstrate that the Schottky barrier width for p-type contact is less than 5 nm. We compare circular transmission line measurements with a p-n diode current-voltage characteristics and show that discrepancies between these two methods can occur if surface quality is deteriorated. It is found that the most efficient contacts to p-type material consist of In0.17Ga0.83N:Mg contact layer with Mg doping level as high as 2 × 1020 cm–3.

Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy

2000 ◽  
Vol 76 (13) ◽  
pp. 1740-1742 ◽  
Author(s):  
L. K. Li ◽  
M. J. Jurkovic ◽  
W. I. Wang ◽  
J. M. Van Hove ◽  
P. P. Chow
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Polarity ◽  
Mg Doping

A comparative study on Be and Mg doping in GaN films grown using a single GaN precursor via molecular beam epitaxy

2006 ◽  
Vol 291 (1) ◽  
pp. 60-65 ◽  
Author(s):  
C.X. Gao ◽  
F.C. Yu ◽  
A.R. Choi ◽  
D.J. Kim ◽  
C.G. Kim ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Comparative Study ◽  
Molecular Beam ◽  
Mg Doping

scholarly journals Defect formation and diffusion mechanism in ion-assisted molecular-beam epitaxy

1992 ◽  
Vol 46 (11) ◽  
pp. 7103-7109 ◽  
Author(s):  
C. J. Tsai ◽  
T. Vreeland ◽  
H. A. Atwater
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Formation ◽  
Diffusion Mechanism ◽  
And Diffusion
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