Coulomb blockade: Toward charge control of self-assembled GaN quantum dots at room temperature

2022 ◽  
Vol 120 (1) ◽  
pp. 012105
Author(s):  
C. A. Sgroi ◽  
J. Brault ◽  
J.-Y. Duboz ◽  
S. Chenot ◽  
P. Vennéguès ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Charge Control ◽  
Self Assembled

scholarly journals Erratum: “Narrow luminescence lines from self-assembled CdSe quantum dots at room temperature” [Appl. Phys. Lett. 78, 297 (2001)]

2001 ◽  
Vol 78 (23) ◽  
pp. 3749-3749
Author(s):  
Z. H. Zheng ◽  
K. Okamoto ◽  
H. C. Ko ◽  
Y. Kawakami ◽  
Sg. Fujita
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Cdse Quantum Dots ◽  
Self Assembled

Room temperature 1.3 μm emission from self-assembled GaAs/GaSb quantum dots

2003 ◽  
Author(s):  
I. Farrer ◽  
M.J. Murphy ◽  
R.M. Thompson ◽  
N.S. Beattie ◽  
D.A. Ritchie ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Self Assembled

Room temperature Coulomb blockade mediated field emission via self-assembled gold nanoparticles

2017 ◽  
Vol 381 (5) ◽  
pp. 476-480 ◽  
Author(s):  
Fei Wang ◽  
Jingyue Fang ◽  
Shengli Chang ◽  
Shiqiao Qin ◽  
Xueao Zhang ◽  
...  
Keyword(s):  
Gold Nanoparticles ◽  
Field Emission ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Self Assembled

Room temperature negative differential capacitance in self-assembled quantum dots

2008 ◽  
Vol 41 (23) ◽  
pp. 235107 ◽  
Author(s):  
V V Ilchenko ◽  
V V Marin ◽  
S D Lin ◽  
K Y Panarin ◽  
A A Buyanin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Differential Capacitance ◽  
Self Assembled

1.55 Micron Emission from InAs/InP Self-Assembled Quantum Dots

1999 ◽  
Vol 571 ◽  
Author(s):  
Ray Murray ◽  
Caroline Bryan ◽  
Chris Button ◽  
D. Spikes ◽  
G. Hill
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Room Temperature ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Wide Range ◽  
Metal Organic ◽  
Self Assembled ◽  
Multi Quantum Well

ABSTRACTSelf-assembled InAs/InP and InAs/InGaAsP quantum dots (QDs) grown by metal-organic chemical vapour epitaxy (MOVPE) exhibit emission at 1.5–1.6 μm at room temperature. P-I-N diodes incorporating a single InAs/InGaAsP QD layer exhibit strong electroluminescence over a wide range of input currents and emit significantly more light per layer than a InGaAs/InGaAsP multi-quantum well device.

1.3 µm Room Temperature Emission from InAs/GaAs Self-Assembled Quantum Dots

1999 ◽  
Vol 38 (Part 1, No. 1B) ◽  
pp. 528-530 ◽  
Author(s):  
Ray Murray ◽  
David Childs ◽  
Surama Malik ◽  
Philip Siverns ◽  
Christine Roberts ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Self Assembled

Modified Luminescence from Germanium Self-assembled Quantum Dots in Photonic Crystal Cavity at Room Temperature

2006 ◽  
Author(s):  
Jinsong Xia ◽  
Norita Usami ◽  
Yuta Ikegami ◽  
Yasushi Nakata ◽  
Yasuhiro Shiraki
Keyword(s):  
Quantum Dots ◽  
Photonic Crystal ◽  
Room Temperature ◽  
Photonic Crystal Cavity ◽  
Self Assembled
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