Femtosecond pulsed laser deposition of thin films upon direct and inverse transfer of ablated particles of foam graphite in the nitrogen atmosphere

Abstract:Gallium nitride thin films were grown by pulsed laser deposition. Subsequently, post-growth annealing of the samples was performed at 400, and 600 oC in the nitrogen atmosphere. Surface morphology of the as-grown and annealed samples was performed by atomic force microscopy, surface roughness of the films improved after annealing. Chemical analysis of the samples was performed using x-ray photon spectroscopy, stoichiometric Gallium nitride thin films were obtained for the samples annealed at 600 oC. Optical measurements of the samples were performed to investigate the effect of annealing on the band gap and optical constants the films.

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Femtosecond pulsed laser deposition of silicon thin films

Nanoscale Research Letters ◽

10.1186/1556-276x-8-272 ◽

2013 ◽

Vol 8 (1) ◽

Cited By ~ 17

Author(s):

Matthew Murray ◽

Gin Jose ◽

Billy Richards ◽

Animesh Jha

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Silicon Thin Films ◽

Femtosecond Pulsed Laser

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Characterization of Boron Nitride Thin Films Prepared by Femtosecond Pulsed Laser Deposition

2005 Pacific Rim Conference on Lasers & Electro-Optics ◽

10.1109/cleopr.2005.1569808 ◽

2006 ◽

Author(s):

T. Shimizu ◽

T. Yoneyama ◽

S. Sato

Keyword(s):

Thin Films ◽

Boron Nitride ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Femtosecond Pulsed Laser

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Growth of heteroepitaxial ZnO thin films by femtosecond pulsed-laser deposition

Journal of Applied Physics ◽

10.1063/1.1324679 ◽

2000 ◽

Vol 88 (11) ◽

pp. 6937-6939 ◽

Cited By ~ 65

Author(s):

E. Millon ◽

O. Albert ◽

J. C. Loulergue ◽

J. Etchepare ◽

D. Hulin ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

Femtosecond Pulsed Laser

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Effect of deposition temperature on morphology and magnetic properties of Co50Fe50 thin films produced by femtosecond pulsed laser deposition

Thin Solid Films ◽

10.1016/j.tsf.2011.04.218 ◽

2011 ◽

Vol 519 (19) ◽

pp. 6420-6425

Author(s):

G. Ausanio ◽

V. Iannotti ◽

C.L. Hison ◽

L. Lanotte ◽

S. Amoruso ◽

...

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Pulsed Laser Deposition ◽

Deposition Temperature ◽

Pulsed Laser ◽

Laser Deposition ◽

Femtosecond Pulsed Laser

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Femtosecond pulsed laser deposition of nanostructured ITO thin films

Materials Science and Engineering C ◽

10.1016/j.msec.2006.07.031 ◽

2007 ◽

Vol 27 (5-8) ◽

pp. 1034-1037 ◽

Cited By ~ 6

Author(s):

R. Teghil ◽

D. Ferro ◽

A. Galasso ◽

A. Giardini ◽

V. Marotta ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Ito Thin Films ◽

Femtosecond Pulsed Laser

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Structure-Property Relationships of Tin Dioxide Thin Films Grown on Sapphire Substrates by Femtosecond Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-654-aa7.7.1 ◽

2000 ◽

Vol 654 ◽

Author(s):

J. E. Dominguez ◽

L. Fu ◽

X. Q. Pan

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Pulsed Laser Deposition ◽

Tin Dioxide ◽

Pulsed Laser ◽

Crystal Defects ◽

Laser Deposition ◽

Sapphire Substrates ◽

Reducing Gases ◽

Femtosecond Pulsed Laser

AbstractThe sensitivity of semiconductive tin dioxide (SnO2) to reducing gases is determinedby the electrical conductivity change in the material. This change in conductivity strongly dependson the thickness of the electron depletion layer near the oxide film surface. In this paper we study the effect of crystal defects and interfaces on the electrical properties and the gas sensing performance of SnO2 thin films. SnO2 thin films with the thickness varying from 15 nm to 100 nm were deposited on sapphire substrates with different surface crystallographic orientations by femtosecond pulsed laser deposition. Films grown on the (1012) sapphire (R-cut) are epitaxial, single crystal. High resolution transmission electron microscopy studies showed the existence of a large number of crystal defects including crystallographic shear planes and misfit dislocations at the film/substrate interface. Films grown on the (0001) sapphire substrates (Ccut) are nanocrystalline with (200) texture. The gas sensitivity of the films was measuredin a gas reactor at high temperature. It was found that the sensitivity to reducing gases increases with decreasing film thickness. Electrical transport properties of the SnO2 thin films were investigated byHall effect measurements. Models correlating the microstructures of thin films to electrical properties are proposed.

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