scholarly journals Asymmetric misfit nanotubes: Chemical affinity outwits the entropy at high-temperature solid-state reactions

2021 ◽  
Vol 118 (35) ◽  
pp. e2109945118
Author(s):  
M. B. Sreedhara ◽  
Simon Hettler ◽  
Ifat Kaplan-Ashiri ◽  
Katya Rechav ◽  
Yishay Feldman ◽  
...  

Asymmetric two-dimensional (2D) structures (often named Janus), like SeMoS and their nanotubes, have tremendous scope in material chemistry, nanophotonics, and nanoelectronics due to a lack of inversion symmetry and time-reversal symmetry. The synthesis of these structures is fundamentally difficult owing to the entropy-driven randomized distribution of chalcogens. Indeed, no Janus nanotubes were experimentally prepared, so far. Serendipitously, a family of asymmetric misfit layer superstructures (tubes and flakes), including LaX-TaX2 (where X = S/Se), were synthesized by high-temperature chemical vapor transport reaction in which the Se binds exclusively to the Ta atoms and La binds to S atoms rather than the anticipated random distribution. With increasing Se concentration, the LaS-TaX2 misfit structure gradually transformed into a new LaS-TaSe2-TaSe2 superstructure. No misfit structures were found for xSe = 1. These counterintuitive results shed light on the chemical selectivity and stability of misfit compounds and 2D alloys, in general. The lack of inversion symmetry in these asymmetric compounds induces very large local electrical dipoles. The loss of inversion and time-reversal symmetries in the chiral nanotubes offers intriguing physical observations and applications.

2019 ◽  
Vol 59 (9) ◽  
pp. 49-57
Author(s):  
Lyudmila Yu. Udoeva ◽  
◽  
Vladimir M. Chumarev ◽  

The demand for renewable energy sources, including solar, is increasing every year, stimulating researchers to develop innovative technological solutions for obtaining material for photovoltaic modules - solar silicon. The article discusses a new process for the vapor transport of silicon in the form of sulfide compounds, which can serve as the basis for a halogen-free technology for producing high-purity silicon for photovoltaic batteries. Considering the well-known properties of silicon di- and monosulfide, it is proposed to use zinc sulfide as a carrier reagent, the presence of which in the Si-ZnS system first provides silicon sulfidization with the formation of gaseous products Zn (g) and SiS (g), and then the reduction of monosulfide to elemental silicon. The possibility of a chemical vapor transport reaction of silicon with zinc sulfide at a temperature above 1000 °C and a Si/ZnS ratio of 1 was justified by the method of the thermodynamic simulation of interactions in the Si-ZnS system in the temperature range 500-1500 °C. Based on the obtained equilibrium models of the interaction of zinc sulfide with technical silicon (grade Kr 2), the separation coefficients of (α) silicon from impurity elements that affect the electrophysical properties of silicon, in particular, reduce the lifetime of excess charge carriers, are calculated. The selectivity of this transport reaction and the prospects for its use for refining metallurgical silicon are estimated. It has been shown that the use of the silicon transfer reaction of zinc sulfide, for example, at 1100 °C, can provide deep purification of silicon from Fe, Ca, Ti, V, Cr, Mn and Cu (α ~ 108-1012), as well as Mg and Al (α ~ 104-106). The process is less effective for removing P and B (α ~ 102) and is not applicable for alkali metals in the entire studied temperature range. It is theoretically possible to improve the refining indexes by lowering the reaction temperature, but the necessary sulfur concentration in the gas phase for the complete conversion of silicon to SiS (g) is achieved only above 1050-1100 oC due to thermal dissociation of ZnS.


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