Influence of chemical disorder, magnetic field and phason flips on the localization of electronic states in a regular icosahedral quasicrystal

2001 ◽  
Vol 250 (1) ◽  
pp. 339-342 ◽  
Author(s):  
Yu. Kh. Vekilov ◽  
E. I. Isaev ◽  
S. F. Arslanov
Keyword(s):  
Magnetic Field ◽  
Electronic States ◽  
Icosahedral Quasicrystal ◽  
Chemical Disorder

Influence of Chemical Disorder, Magnetic Field and Phason Flipd on the Localization of Electronic States in a Regular Icosahedral Quasicrystal

2000 ◽  
Vol 643 ◽  
Author(s):  
Yu.Kh. Vekilov ◽  
E.I. Isaev ◽  
S.F. Arslanov
Keyword(s):  
Magnetic Field ◽  
Electronic Spectrum ◽  
Long Range ◽  
Electronic States ◽  
Wave Functions ◽  
Icosahedral Quasicrystal ◽  
Long Range Order ◽  
Level Statistic ◽  
Chemical Disorder ◽  
Icosahedral Quasicrystals

AbstractThe influence of substitutional chemical disorder, magenetic field and phasons, on the electronic spectrum and wave functions of icosahedral quasicrystals is investigated by means of tight-biding approximation and level statistic method. The results show that the localization of electronic states in an ideal quasictystal exists due to their coherent interfernce at the Fremi level which is caused by the symmetry and aperiodic long-range order.

EFFECT OF THE COUPLING BETWEEN THE NORMAL AND LATERAL DEGREES OF FREEDOM ON LOCALIZED ELECTRONIC STATES IN SUPERLATTICE'S WITH STRUCTURAL DEFECTS

2000 ◽  
Vol 14 (24) ◽  
pp. 2587-2596
Author(s):  
KE-QIU CHEN ◽  
XUE-HUA WANG ◽  
BEN-YUAN GU
Keyword(s):  
Magnetic Field ◽  
Transverse Wave ◽  
Structural Defect ◽  
Degrees Of Freedom ◽  
Coupling Effect ◽  
Electronic States ◽  
Defect Layer ◽  
Wave Number ◽  
Structural Defects ◽  
Localized Levels

Using a effect-barrier height method, we investigate the effect of coupling between normal and lateral degree of freedom of an electron on the localized electronic states at zero and finite magnetic fields perpendicular to interfaces in SL's with structural defect layer within the framework of effective-mass theory. The numerical calculations for GaAs/AlxGa1-xAs material show that minibands, minigaps and localized levels is obviously dependent on the transverse wave number kxy. Magneto-coupling effect brings about not only the splitting of the localized electron levels but also the definite dependence of the minibands, minigaps, localized levels and localization degree on magnetic field and Landau indices. It is believed that applying an appropriate magnetic field may provide a available way to control the minibands, minigaps and localized levels in structural defect superlattice's to match practice requirements.

scholarly journals Effect of magnetic field and impurities in InAs/GaAs and GaN/AlN self-assembled quantum dots

2019 ◽  
Vol 65 (3) ◽  
pp. 231
Author(s):  
G. Linares García ◽  
And L. Meza-Montes
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Probability Density ◽  
Electronic States ◽  
Zeeman Splitting ◽  
Growth Direction ◽  
Two Systems ◽  
Piezoelectric Effects ◽  
Self Assembled ◽  
The Magnetic Field

A theoeritical study on the effect of a magnetic field or impurities on the carries states of self-assembled quantum dots is presented. The magnetic field is applied along the growth direction of the dots, and for comparison two systems are considered, InAs embeded in GaAs, and GaN in AlN. The electronic states and energy are calculated in the framework of the k.p theory in 8 bands including the strain and piezoelectric effects. Zeeman splitting and anticrossings are observed in InAs/GaAs, while the field introduces small changes in the nitrides. It is also included a study about hidrogen-like impurities, which may be negative or positive. It is noted that depending on the type of impurity, the confinement energy of carriers is changed, and the distribution of the probability density of the carriers is affected  too.

Sign in / Sign up

Export Citation Format

Share Document