Influence of Orientation and Oxygen Content on Electrical Properties of In Situ Deposited PZT Thin Films

2003 ◽  
Vol 288 (1) ◽  
pp. 111-120 ◽  
Author(s):  
G. Le Rhun ◽  
G. Poullain ◽  
R. Bouregba ◽  
B. Vilquin
2004 ◽  
Vol 7 (2) ◽  
pp. 363-367 ◽  
Author(s):  
Antonio Leondino Bacichetti Junior ◽  
Manuel Henrique Lente ◽  
Ricardo Gonçalves Mendes ◽  
Pedro Iris Paulin Filho ◽  
José Antonio Eiras

1994 ◽  
Vol 361 ◽  
Author(s):  
Peter K. Schenck ◽  
Mark D. Vaudin ◽  
Byeong W. Lee ◽  
David W. Bonnell ◽  
John W. Hastie ◽  
...  

ABSTRACTOptical multichannel emission spectroscopie studies and ICCD (intensified charge coupled device) imaging have been applied to real-time, in situ gas phase species identification and plume structure analysis during the pulsed excimer laser deposition (PLD) of various ferroelectric thin films. Additional information on the non-excited plume species has been obtained using molecular beam-sampling mass spectrometry. The materials studied included targets of PbZr0.53Ti0.47O3 (PZT) and BaTiO3. For the BaTiO3 films, the partial pressure of oxygen in the buffer gas and the atomic oxygen emission within the plume both correlated with the observed lattice parameter, as determined by X-ray analysis. Reduced plume oxygen content resulted in an increased lattice parameter that, in turn, could be related to a reduced oxygen content in the film. ICCD imaging of plumes from PZT targets identified the presence of ejected particulates in the plume after multiple laser shots had worked the target surface. Scanning electron microscopy (SEM) studies of the PZT target surface and film morphology, revealed cone-like formations on the target and éjecta on the films which correlated well with the ICCD observation of plume particulates.


2001 ◽  
Vol 36 (1-4) ◽  
pp. 53-62 ◽  
Author(s):  
Paul Muralt ◽  
Stephane Hiboux ◽  
Claude Mueller ◽  
Thomas Maeder ◽  
Laurent Sagalowicz ◽  
...  

2009 ◽  
Vol 194 (1) ◽  
pp. 93-103 ◽  
Author(s):  
A. Trenczek-Zajac ◽  
M. Radecka ◽  
K. Zakrzewska ◽  
A. Brudnik ◽  
E. Kusior ◽  
...  

2002 ◽  
Vol 271 (1) ◽  
pp. 51-56 ◽  
Author(s):  
P. V. Burmistrova ◽  
A. S. Sigov ◽  
A. L. Vasiliev ◽  
K. A. Vorotilov ◽  
O. M. Zhigalina

1998 ◽  
Vol 541 ◽  
Author(s):  
H. Fujisawa ◽  
S. Nakashima ◽  
M. Shimizu ◽  
H. Niu

AbstractThe grain size of MOCVD-Pb(Zr,Ti)O3 (PZT) thin films was successfully controlled by changing the grain size of Ir bottom electrodes and by changing the growth rate of PZT films. In Ir/PZT/Ir/SiO2/Si capacitors, the grain size of PZT thin films increased from 120 to 240nm as the grain size of bottom Ir electrodes increased from 50 to 200nm. The dielectric constants of PZT thin films increased from 760 to 1440 as the grain size increased from 120 to 240nm. Remanent polarization increased and coercive field decreased as the grain size increased. This dependence of electrical properties on the grain size coincided with that of ceramics.


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