Frequency Dependent Electro-Optic Properties of Potassium Lithium Tantalate Niobate Single Crystal

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

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Electro-optic property of Ti^4+-doped LiNbO_3 single crystal

Optical Materials Express ◽

10.1364/ome.6.002593 ◽

2016 ◽

Vol 6 (8) ◽

pp. 2593 ◽

Cited By ~ 7

Author(s):

Wan-Ying Du ◽

Zi-Bo Zhang ◽

Jia-Qi Xu ◽

Wing-Han Wong ◽

Dao-Yin Yu ◽

...

Keyword(s):

Single Crystal ◽

Electro Optic ◽

Optic Property ◽

Electro Optic Property

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Flexible Electro-Optic, Single-Crystal Difference Frequency Generation Architecture for Ultrafast Mid-Infrared Dual-Comb Spectroscopy

ACS Photonics ◽

10.1021/acsphotonics.8b00143 ◽

2018 ◽

Vol 5 (6) ◽

pp. 2348-2353 ◽

Cited By ~ 11

Author(s):

Borja Jerez ◽

Pedro Martín-Mateos ◽

Frederik Walla ◽

Cristina de Dios ◽

Pablo Acedo

Keyword(s):

Single Crystal ◽

Difference Frequency Generation ◽

Difference Frequency ◽

Mid Infrared ◽

Electro Optic ◽

Frequency Generation

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Epitaxial Variants and Grain Boundary Structures in Heteroepitaxial Lithium Tantalate on Basal Sapphire

MRS Proceedings ◽

10.1557/proc-441-125 ◽

1996 ◽

Vol 441 ◽

Author(s):

Robert A. Bellman ◽

Rishi Raj

Keyword(s):

Grain Boundary ◽

Stoichiometric Composition ◽

Lithium Tantalate ◽

Grain Structure ◽

Chemical Beam Epitaxy ◽

Heteroepitaxial Growth ◽

Crystalline Perfection ◽

Electro Optic ◽

Optical Applications ◽

High Degree

AbstractSingle crystal heteroepitaxial ferroelectric films are desired for non-linear optical applications to maximize the electro-optic coefficient and minimize waveguide losses. In this study, lithium tantalate films were deposited on (0001) sapphire from lithium hexaethoxytantalate by chemical beam epitaxy. Characterization showed that films had nearly stoichiometric composition, epitaxial orientation, and a high degree of crystalline perfection. However, the films exhibited high optical waveguide losses. Additional characterization by TEM revealed that the films had a two dimensional grain structure with epitaxial variants related by translation and a twin orientation to the substrate. To better understand the nature of the heteroepitaxial growth of lithium tantalate on (0001) sapphire, a model was developed to explain the observed epitaxial orientations, misfit dislocation networks, and grain boundary structures of lithium tantalate on (0001) sapphire.

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