Electron-irradiation-induced phase transformation and fractional volatilization in (Mg, Fe)2SiO4olivine thin films

2001 ◽  
Vol 81 (12) ◽  
pp. 2823-2840 ◽  
Author(s):  
P. Carrez ◽  
H. Leroux ◽  
P. Cordier ◽  
F. Guyot
1992 ◽  
Vol 7 (11) ◽  
pp. 3065-3071 ◽  
Author(s):  
Peir-Yung Chu ◽  
Isabelle Campion ◽  
Relva C. Buchanan

Phase transformation and preferred orientation in ZrO2 thin films, deposited on Si(111) and Si(100) substrates, and prepared by heat treatment from carboxylate solution precursors were investigated. The deposited films were amorphous below 450 °C, transforming gradually to the tetragonal and monoclinic phases on heating. The monoclinic phase developed from the tetragonal phase displacively, and exhibited a strong (111) preferred orientation at temperature as low as 550 °C. The degree of preferred orientation and the tetragonal-to-monoclinic phase transformation were controlled by heating rate, soak temperature, and time. Interfacial diffusion into the film from the Si substrate was negligible at 700 °C and became significant only at 900 °C, but for films thicker than 0.5 μm, overall preferred orientation exceeded 90%.


2021 ◽  
Vol 32 (8) ◽  
pp. 10018-10027
Author(s):  
M. A. Olgar ◽  
B. M. Başol ◽  
M. Tomakin ◽  
E. Bacaksız

2021 ◽  
Vol 266 ◽  
pp. 115078
Author(s):  
R. Ning ◽  
Z.P. Yang ◽  
Z.Y. Gao ◽  
X.Z. Cao ◽  
W. Cai

2020 ◽  
Vol 195 ◽  
pp. 109020
Author(s):  
Chun-Yuan Wang ◽  
Chin-I Wang ◽  
Sheng-Han Yi ◽  
Teng-Jan Chang ◽  
Chun-Yi Chou ◽  
...  

Vacuum ◽  
2017 ◽  
Vol 139 ◽  
pp. 23-25 ◽  
Author(s):  
A.J. Cavaleiro ◽  
A.S. Ramos ◽  
R.M.S. Martins ◽  
F.M. Braz Fernandes ◽  
M.T. Vieira

2004 ◽  
Author(s):  
Zhenyu Yuan ◽  
Xiulan Cheng ◽  
Dong Xu ◽  
Zhican Ye ◽  
YaFei Zhang ◽  
...  

2005 ◽  
Vol 14 (8) ◽  
pp. 1395-1401 ◽  
Author(s):  
T.W.H. Oates ◽  
L. Ryves ◽  
F.A. Burgmann ◽  
B. Abendroth ◽  
M.M.M. Bilek ◽  
...  

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