Preparation and tribological properties of polymer film covalently bonded to silicon substrate via an epoxy-terminated self-assembled monolayer

Thin films deposited on a phosphonate 3-aminopropyltriethoxysilane (APTES) self- assembled monolayer (SAM) were prepared on a hydroxylated silicon substrate by self-assembling. The chemical compositions and the chemical state of the film elements were determined by X-ray photoelectron spectrometry. The thickness of the films was determined with an ellipsometer, while the morphologies and nanotribological properties of the samples were analysed by atomic force microscopy. As a result, the target film was obtained. It was also found that the thin films showed the lowest friction and adhesion, followed by APTES—SAM and phosphorylated APTES—SAM, while the silicon substrate showed the highest friction and adhesion. Microscale scratch/wear studies clearly showed that thin films were much more scratch/wear resistant than the other samples.

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Self-assembled-monolayer-modified silicon substrate to enhance the sensitivity of peptide detection for AP-MALDI mass spectrometry

Journal of Mass Spectrometry ◽

10.1002/jms.1261 ◽

2007 ◽

Vol 42 (12) ◽

pp. 1628-1636 ◽

Cited By ~ 13

Author(s):

Shuchen Hsieh ◽

Hsin-Yi Ku ◽

Yao-Tang Ke ◽

Hui-Fen Wu

Keyword(s):

Mass Spectrometry ◽

Silicon Substrate ◽

Maldi Mass Spectrometry ◽

Self Assembled Monolayer ◽

Peptide Detection ◽

Self Assembled

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Physical Characterization and Electrical Transport in End-Group Functionalized Self-Assembled Monolayers

MRS Proceedings ◽

10.1557/proc-488-847 ◽

1997 ◽

Vol 488 ◽

Author(s):

J. Collet ◽

D. Vuillaume ◽

M. Bonnier ◽

O. Bouloussa ◽

F. Rondelez ◽

...

Keyword(s):

Electrical Properties ◽

Electrical Transport ◽

Native Oxide ◽

Self Assembled Monolayers ◽

Self Assembled Monolayer ◽

Alkyl Chains ◽

Covalently Bonded ◽

Assembled Monolayers ◽

Self Assembled ◽

End Group

AbstractWe have previously demonstrated that a self-assembled monolayer (SAM) of alkyltrichlorosilane molecules, covalently bonded to the native oxide of a silicon substrate, allows the fabrication of MIS (Metal-Insulator-Semiconductor) devices with excellent electrical properties [1]. Here we demonstrate that we can functionalize, with π-electron moieties, the end-groups of the molecules, once grafted to the substrate, without disturbing the low conductivity through the SAM (σ⊥), while strongly increasing the in-plane conductivity (σ//). The functionalization of the monolayer is monitored by FTIR, ellipsometry and X ray reflectivity. Conductivity, photoconductivity and capacitance measurements are carried out to study the effect of these chemical functionalizations on the electrical properties of the monolayers. We demonstrate that the low perpendicular conductivity (σ⊥≈10−15 S/cm) is not altered by the end-group functionalities while high anisotropic conductivities (σ///σ⊥ ≈ 107-108) are obtained at a monolayer level. Interfacial (Si/SAM and SAM/metal) energy barriers are investigated as a function of the end-group functionalities. We also show that conducting monomers substituted by alkyl chains (3,6- dibromocarbazole-N-octyltrimethoxysilane), directly grafted to the substrate, exhibit similar behavior.

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