A low temperature preparation of Sr0.7Bi2+x.Ta2O9thin films on SiO2/Si by pulsed laser deposition for application of metal-ferroelectric-insulator-semiconductor structure

1999 ◽  
Vol 26 (1-2) ◽  
pp. 17-28 ◽  
Author(s):  
Minoru Noda ◽  
Yoshinorimatsumuro ◽  
Hideki Sugiyama ◽  
Masanori Okuyama
Keyword(s):  
Low Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Semiconductor Structure ◽  
Laser Deposition ◽  
Low Temperature Preparation ◽  
Temperature Preparation

Low-temperature preparation of high-n TiO2 thin film on glass by pulsed laser deposition

2015 ◽  
Vol 347 ◽  
pp. 528-534 ◽  
Author(s):  
Akihiro Ishii ◽  
Yoko Nakamura ◽  
Itaru Oikawa ◽  
Atsunori Kamegawa ◽  
Hitoshi Takamura
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Pulsed Laser Deposition ◽  
Tio2 Thin Film ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Low Temperature Preparation ◽  
Temperature Preparation

Low Temperature Preparation of Sr2(Ta1-x, Nbx)2O7 Ferroelectric Thin Film by Pulsed Laser Deposition

1999 ◽  
Vol 596 ◽  
Author(s):  
Minoru Noda ◽  
Toshiyuki Nakaiso ◽  
Hideki Sugiyama ◽  
Masanori Okuyama
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Pulsed Laser Deposition ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pulsed Laser ◽  
Target Material ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Low Temperature Preparation

AbstractPreferentially (151)-oriented Sr2(Ta1-x, Nbx)2O7 (STN) thin films on Pt have been prepared at temperatures as low as 550 and 600°C, in O2 and N2O atmospheres, respectively, by pulsed laser deposition (PLD). The temperatures are significantly lower than those prepared by sol-gel methods, where 950°C was reported. These are the lowest growth temperatures of crystalline STN thin films. Composition ratio (x) in the target material was determined to be around 0.3 from measurement of the Curie temperature and ferroelectric properties. Active oxygen generated by laser irradiation in ambient O2 or N2O atmosphere is found to be very effective for chemical reaction, and decreases the growth temperature of crystalline STN films. It is also confirmed by surface AFM and cross-sectional SEM observations that the film has a columnar-shaped structure with grain size ranging from 50 to 100 nm. Remanent polarization (Pr) and coercive field (Ec) are 0.4μ C/cm2 and 30 kV/cm, respectively. Finally, we expect the low temperature STN film prepared by PLD to be a promising ferroelectric for the application in ferroelectric memory FETs.

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