Modeling Convection-Driven Diffusion-Controlled Wet Chemical Etching Using a Total-Concentration Fixed-Grid Method

2007 ◽  
Vol 53 (2) ◽  
pp. 143-159 ◽  
Author(s):  
P. Rath ◽  
J. C. Chai
2006 ◽  
Vol 129 (4) ◽  
pp. 509-516 ◽  
Author(s):  
P. Rath ◽  
J. C. Chai ◽  
Y. C. Lam ◽  
V. M. Murukeshan ◽  
H. Zheng

A total concentration fixed-grid method is presented in this paper to model the two-dimensional wet chemical etching. Two limiting cases are discussed, namely—the diffusion-controlled etching and the reaction-controlled etching. A total concentration, which is the sum of the unreacted and the reacted etchant concentrations, is defined. Using this newly defined total concentration, the governing equation also contains the interface condition. A new update procedure for the reacted concentration is formulated. For demonstration, the finite-volume method is used to solve the governing equation with prescribed initial and boundary conditions. The effects of reaction rate at the etchant–substrate interface are examined. The results obtained using the total concentration method, are compared with available results from the literature.


Author(s):  
P. Rath ◽  
J. C. Chai ◽  
H. Y. Zheng ◽  
Y. C. Lam ◽  
V. M. Murukeshan

This article presents a total concentration method for two-dimensional wet chemical etching. The proposed procedure is a fixed-grid approach. It is analogous to the enthalpy method used for modeling melting/solidification problems. The governing equation is formulated using the total concentration of the etchant. It includes the reacted and the unreacted concentrations of the etchant. The proposed governing equation includes the interface condition. The reacted concentration is used to capture the etchant-substrate interface implicitly. Since the grids are fixed, a diffusion problem remains a diffusion problem unlike the moving grid approach where the diffusion problem becomes the convection-diffusion problem due to the mesh velocity. For demonstration purposes, the finite volume method is used to solve for the transient concentration distribution of etchant. In this article, two-dimensional diffusion-controlled wet chemical etching processes are modeled. The results obtained from the proposed total concentration method are compared with available “analytic” solutions and solutions from moving-grid approach.


2005 ◽  
Vol 48 (11) ◽  
pp. 2140-2149 ◽  
Author(s):  
P. Rath ◽  
J.C. Chai ◽  
H. Zheng ◽  
Y.C. Lam ◽  
V.M. Murukeshan ◽  
...  

Author(s):  
Dongmei Meng ◽  
Joe Rupley ◽  
Chris McMahon

Abstract This paper presents decapsulation solutions for devices bonded with Cu wire. By removing mold compound to a thin layer using a laser ablation tool, Cu wire bonded packages are decapsulated using wet chemical etching by controlling the etch time and temperature. Further, the paper investigates the possibilities of decapsulating Cu wire bonded devices using full wet chemical etches without the facilitation of laser ablation removing much of mold compound. Additional discussion on reliability concerns when evaluating Cu wirebond devices is addressed here. The lack of understanding of the reliability of Cu wire bonded packages creates a challenge to the FA engineer as they must develop techniques to help understanding the reliability issue associated with Cu wire bonding devices. More research and analysis are ongoing to develop appropriate analysis methods and techniques to support the Cu wire bonding device technology in the lab.


Small ◽  
2020 ◽  
Vol 16 (51) ◽  
pp. 2007045
Author(s):  
Mei Sun ◽  
Bocheng Yu ◽  
Mengyu Hong ◽  
Zhiwei Li ◽  
Fengjiao Lyu ◽  
...  

Author(s):  
Albert Grau-Carbonell ◽  
Sina Sadighikia ◽  
Tom A. J. Welling ◽  
Relinde J. A. van Dijk-Moes ◽  
Ramakrishna Kotni ◽  
...  

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