Effect of ion damage on the crystallization of PZT thin films

ABSTRACTThe (100), (111) and randomly oriented PZT thin films were fabricated on Pt/Ti/Coming 7059 glass using sol-gel method. The thin films having different orientation were fabricated by different drying conditions for pyrolysis. The preferred orientations of the PZT thin films were observed using XRD, rocking curves, and pole figures. The microstructures were investigated using SEM. The hysteresis loops and capacitance-voltage characteristics of the films were investigated using a standardized ferroelectric test system. The dielectric constant and current-voltage characteristics of the films were investigated using an impedance analyzer and pA meter, respectively. The films oriented in a particular direction showed superior electrical characteristics to the randomly oriented films.

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Preparation of PZT Thin Films on Stainless Steel Using Electrochemical Reduction

Journal of Solid State Chemistry ◽

10.1006/jssc.1997.7709 ◽

1998 ◽

Vol 136 (2) ◽

pp. 293-297 ◽

Cited By ~ 5

Author(s):

Michio Koinuma ◽

Hideki Ohmura ◽

Yoshiro Fujioka ◽

Yasumichi Matsumoto ◽

Satoshi Yamada

Keyword(s):

Thin Films ◽

Stainless Steel ◽

Electrochemical Reduction ◽

Pzt Thin Films

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Low temperature preparation of sol-gel PZT thin films for pyroelectric and other integrated devices

ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics ◽

10.1109/isaf.1996.602739 ◽

2002 ◽

Author(s):

J.C. Gunter ◽

S.K. Streiffer ◽

A.I. Kingon

Keyword(s):

Thin Films ◽

Low Temperature ◽

Sol Gel ◽

Pzt Thin Films ◽

Integrated Devices ◽

Low Temperature Preparation ◽

Temperature Preparation

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The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

MRS Proceedings ◽

10.1557/proc-493-131 ◽

1997 ◽

Vol 493 ◽

Cited By ~ 8

Author(s):

Seung-Hyun Kim ◽

J. G. Hong ◽

J. C. Gunter ◽

H. Y. Lee ◽

S. K. Streiffer ◽

...

Keyword(s):

Thin Films ◽

Leakage Current ◽

Bottom Electrode ◽

Ferroelectric Properties ◽

Sol Gel ◽

Chemical Solution ◽

Electrode Structure ◽

Solution Deposition ◽

Pzt Thin Films ◽

Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

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