Frequency Dependence of Polarization Hysteresis Loop in CaBi4 Ti4 O14 Ferroelectric Thin Films

The evolution of the fatigue behaviors in Bi3.5Nd0.5Ti3O12 (BNT) ferroelectric thin films deposited on Pt(111)/Ti/SiO2/Si(100) substrates by chemical solution deposition (CSD) method effected by amplitude, frequency and profile of the driving electric field were reported. It is found that the switching with lower frequency and higher amplitude of the external voltages resulted in higher fatigue rates and only bipolar waveform type voltage can result in fatigue, whereas a unipolar voltage cannot. An empirical function with N/f is proposed in the frequency-dependence of polarization fatigue, where N is the number of switching cycles and f is the frequency of driving. It is indicated that injected charges from electrodes into films, the trapped charges, and suppression of the seeds of opposite domain nucleation are the main mechanism of fatigue in ferroelectric BNT thin films.

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Imprint in Ferroelectric Thin Films Caused by Screening of an Electric Field in a Thin Surface Layer

MRS Proceedings ◽

10.1557/proc-688-c3.4.1 ◽

2001 ◽

Vol 688 ◽

Cited By ~ 2

Author(s):

Michael Grossmann ◽

Oliver Lohse ◽

Dierk Bolten ◽

Ulrich Boettger ◽

Rainer Waser

Keyword(s):

Thin Films ◽

Surface Layer ◽

Electric Field ◽

Hysteresis Loop ◽

Quantitative Description ◽

Aging Effect ◽

Ferroelectric Thin Films ◽

Thin Surface Layer ◽

Simulation Based ◽

Experimental Parameters

AbstractImprint describes an aging effect in ferroelectric thin films which manifests itself by a shift of the P-V hysteresis loop on the voltage axis. In this paper a mechanism is described which attributes imprint to the screening of a large electric field within a thin surface layer by electronic charges. The field at the surface arises due to the existence of a thin surface layer in which the spontaneous ferroelectric polarization is suppressed. In the course of aging this field is gradually screened by electronic charges which are generated by a Frenkel-Poole effect and then become trapped near the electrode-thin-film interface causing the shift of the hysteresis loop. A numerical simulation based on this model allows a quantitative description of the imprint effect as a function of various experimental parameters.

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Models for the frequency dependence of coercive field and the size dependence of remanent polarization in ferroelectric thin films

Integrated Ferroelectrics ◽

10.1080/10584589608013050 ◽

1996 ◽

Vol 12 (2-4) ◽

pp. 71-81 ◽

Cited By ~ 35

Author(s):

J. F. Scott

Keyword(s):

Thin Films ◽

Frequency Dependence ◽

Coercive Field ◽

Remanent Polarization ◽

Size Dependence ◽

Ferroelectric Thin Films

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Frequency Dependence of the Coercive Voltage of Ferroelectric Thin Films

MRS Proceedings ◽

10.1557/proc-596-291 ◽

1999 ◽

Vol 596 ◽

Cited By ~ 4

Author(s):

R. Waser ◽

O. Lohse ◽

M. Grossmann ◽

U. Boettger ◽

D. Bolten ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Frequency Dependence ◽

Recent Progress ◽

Theoretical Models ◽

Ferroelectric Thin Films ◽

Dynamic Hysteresis ◽

Measuring Techniques ◽

Pulse Characterization ◽

Fast Pulse

AbstractRecent progress in the measuring techniques based on a combination of a quasistatic P-V analysis, conventional dynamic hysteresis measurements, and fast pulse characterization allows to determine the coercive voltage as a function of the frequency over a range of more than seven orders of magnitude. In this review, we explain the experimental techniques and present the results for the thin film systems of SrBi2Ta2O9 (SBT) and Pb(ZrTi)O3 (PZT). Theoretical models of the correlation between the ferroelectric relaxation and the coercive voltage are discussed in the light of the new data.

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Physical Phenomena in Ferroelectric Thin Films: Study and Modeling

MRS Proceedings ◽

10.1557/proc-361-135 ◽

1994 ◽

Vol 361 ◽

Cited By ~ 4

Author(s):

Vladimir I. Petrovsky ◽

Eugeniy Ph. Pevtsov ◽

Alexsander S. Sigov

Keyword(s):

Thin Films ◽

Hysteresis Loop ◽

Contact Potential Difference ◽

Contact Layer ◽

Interface Layer ◽

Quality Parameters ◽

Ferroelectric Thin Films ◽

Dielectric Hysteresis Loop ◽

Contact Potential ◽

Polarization Axis

ABSTRACTAn impact of different factors on the shape of dielectric hysteresis loop in ferroelectric thin films is discussed. They include: polycrystallinity and disorientation of polarization axis, polarization nonuniformity and depolarization fields, interface contact layer and series capacity, contact potential difference and interaction of volume impurity centers with polarization field. A comparison between models and experiment show that compromise of interface layer and space charge permits to explain all main distortions of dielectric hysteresis loop in thin films at realistic parameters of the layers. The obtained results permit to explaine the distortions of real hysteresis loop and also to obtain quality parameters of samples, which are important for improving of film preparation techniques.

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