Imprint in Ferroelectric Thin Films Caused by Screening of an Electric Field in a Thin Surface Layer

2001 ◽  
Vol 688 ◽  
Author(s):  
Michael Grossmann ◽  
Oliver Lohse ◽  
Dierk Bolten ◽  
Ulrich Boettger ◽  
Rainer Waser
Keyword(s):  
Thin Films ◽  
Surface Layer ◽  
Electric Field ◽  
Hysteresis Loop ◽  
Quantitative Description ◽  
Aging Effect ◽  
Ferroelectric Thin Films ◽  
Thin Surface Layer ◽  
Simulation Based ◽  
Experimental Parameters

AbstractImprint describes an aging effect in ferroelectric thin films which manifests itself by a shift of the P-V hysteresis loop on the voltage axis. In this paper a mechanism is described which attributes imprint to the screening of a large electric field within a thin surface layer by electronic charges. The field at the surface arises due to the existence of a thin surface layer in which the spontaneous ferroelectric polarization is suppressed. In the course of aging this field is gradually screened by electronic charges which are generated by a Frenkel-Poole effect and then become trapped near the electrode-thin-film interface causing the shift of the hysteresis loop. A numerical simulation based on this model allows a quantitative description of the imprint effect as a function of various experimental parameters.

Shape of piezoelectric hysteresis loop for non-ferroelastic switching

2003 ◽  
Vol 784 ◽  
Author(s):  
A. K. Tagantsev ◽  
P. Muralt ◽  
J. Fousek
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Hysteresis Loop ◽  
Single Crystals ◽  
Applied Electric Field ◽  
Piezoelectric Coefficient ◽  
Hysteresis Loops ◽  
Simple Theory ◽  
The Difference

ABSTRACTA simple theory for the shape of the piezoelectric hysteresis loops (piezoelectric coefficient d vs. applied electric field E) is developed for the case of non-ferroelelastic 180° switching in ferroelectrics. The theory provides explanations for specific features of piezoelectric hysteresis loops, which have been observed in single crystals, thin films and in ceramics in particular. The piezoelectric coefficient may show a “hump”, i.e. when E decreases from the tip of the loop down to zero, d passes through a maximum, and a “nose”, i.e. a self-crossing of the loop close to its tips. The theory also explains the difference in the coercive fields seen in the polarization and piezoelectric loops.

The enhanced piezoelectricity in compositionally graded ferroelectric thin films under electric field: A role of flexoelectric effect

2018 ◽  
Vol 123 (8) ◽  
pp. 084103 ◽  
Author(s):  
Ye Qiu ◽  
Huaping Wu ◽  
Jie Wang ◽  
Jia Lou ◽  
Zheng Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Ferroelectric Thin Films ◽  
Flexoelectric Effect

Temperature-electric field hysteresis loop of multicaloric effects in PbZr0.8Ti0.2O3 thin films

2019 ◽  
Vol 383 (24) ◽  
pp. 2933-2937 ◽  
Author(s):  
F. Wang ◽  
T. Liu ◽  
C.L. Xie ◽  
Y. Liu ◽  
N.S. Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Hysteresis Loop

Leakage behavior and distortion of the hysteresis loop in ferroelectric thin films

1997 ◽  
Vol 40 (2) ◽  
pp. 126-134 ◽  
Author(s):  
Lirong Zheng ◽  
Chenglu Lin ◽  
Huaping Xu ◽  
Shichang Zou ◽  
Okuyama Masanori
Keyword(s):  
Thin Films ◽  
Hysteresis Loop ◽  
Ferroelectric Thin Films

Modeling of imprint in hysteresis loop of ferroelectric thin films with top and bottom interface layers

2007 ◽  
Vol 90 (4) ◽  
pp. 042902 ◽  
Author(s):  
Z. Ye ◽  
M. H. Tang ◽  
Y. C. Zhou ◽  
X. J. Zheng ◽  
C. P. Cheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Hysteresis Loop ◽  
Ferroelectric Thin Films ◽  
Bottom Interface ◽  
Interface Layers

scholarly journals Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

2015 ◽  
Vol 99 ◽  
pp. 240-246 ◽  
Author(s):  
Dayu Zhou ◽  
Yan Guan ◽  
Melvin M. Vopson ◽  
Jin Xu ◽  
Hailong Liang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Hafnium Oxide ◽  
Ferroelectric Thin Films ◽  
Polarization Reversal ◽  
Temperature Scaling ◽  
Silicon Doped

Measurement of Three Dimensional Polarization Direction in Ferroelectric Thin Films Using Scanning Nonlinear Dielectric Microscopy with Rotating Electric Field

2002 ◽  
Vol 748 ◽  
Author(s):  
Hiroyuki Odagawa ◽  
Yasuo Cho
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electric Field ◽  
Three Dimensional ◽  
Ferroelectric Thin Films ◽  
Experimental Result ◽  
Polarization Direction ◽  
Polarization Component ◽  
Nonlinear Dielectric ◽  
Component Parallel

ABSTRACTA scanning nonlinear dielectric microscope (SNDM) probe, called theε311 -type probe, and a system to measure the ferroelectric polarization component parallel to the surface using rotating electric field have been developed. This is achieved by measuring the ferroelectric material's nonlinear dielectric constant ε311 instead of ε333, which is measured in conventional SNDM. Experimental result shows that we can successfully determine polarization component parallel to the surface. The SNDM system can measure polarization at any angle from the surface normal which is often of interest.

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