STRATEGY FOR LOW-TEMPERATURE CRYSTALLIZATION OF TITANIUM-RICH PZT THIN FILMS BY CHEMICAL SOLUTION DEPOSITION

2008 ◽  
Vol 100 (1) ◽  
pp. 285-296 ◽  
Author(s):  
BARBARA MALIC ◽  
MIRA MANDELJC ◽  
GORAN DRAZIC ◽  
MIHA SKARABOT ◽  
IGOR MUSEVIC ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization

Epitaxial growth of PbZr0.5Ti0.5O3 thin films on (001) LaAlO3 by the chemical solution deposition method

1999 ◽  
Vol 14 (10) ◽  
pp. 4004-4010 ◽  
Author(s):  
J. H. Kim ◽  
F. F. Lange
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Driving Force ◽  
Fluorite Phase ◽  
Deposition Method ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Boundary Area ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method

Epitaxial PbZr0.5Ti0.5O3 (PZT) thin films were grown on (001) LaAlO3 substrates (∼6.1% lattice mismatch) by the chemical solution deposition method. The sequence of epitaxy during heating between 375 and 700 °C/1h was characterized by x-ray diffraction and transmission electron microscopy. At approximately 375 °C/1h, a nanocrystalline metastable fluorite phase of PZT was formed from the pyrolyzed amorphous precursor. At higher temperatures (400–425 °C/1h), thermodynamically stable PZT crystallites were first observed at the interface; with increasing higher temperatures, these nuclei grew across the interface and through the film toward the surface by consuming the metastable nanocrystalline fluorite grains. PZT thin films annealed above ∼500 °C/1h were observed to be dense with an epitaxial orientation relationship of [100](001)PZT‖[100](001)LAO. The metastable nanocrystalline fluorite to the stable single-crystal perovskite transformation gives an extra driving force by providing an additional decrease in free energy in addition to a driving force from the elimination of grain boundary area for epitaxy.

scholarly journals Nanostructure stabilization by low-temperature dopant pinning in multiferroic BiFeO3-based thin films produced by aqueous chemical solution deposition

2020 ◽  
Vol 8 (12) ◽  
pp. 4234-4245 ◽  
Author(s):  
Carlos Gumiel ◽  
Teresa Jardiel ◽  
David G. Calatayud ◽  
Thomas Vranken ◽  
Marlies K. Van Bael ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Chemical Solution Deposition ◽  
Single Phase ◽  
Aqueous Media ◽  
Processing Conditions ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Multiferroic Bifeo3

BiFeO3 single-phase thin films with an effective and tuneable multiferroic response are obtained in aqueous media by using mild processing conditions.

New preparation process of Pb(ZrxTi1−x)O3 thin films from PbZrO3 and PbTiO3 multilayers

2002 ◽  
Vol 17 (9) ◽  
pp. 2217-2226 ◽  
Author(s):  
Gang He ◽  
Takashi Iijima ◽  
H. Funakubo
Keyword(s):  
Thin Films ◽  
Ferroelectric Property ◽  
Chemical Solution Deposition ◽  
Perovskite Phase ◽  
Preparation Process ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Single Perovskite Phase ◽  
Combinatorial Process

This work presents the preliminary experimental results of Pb(ZrxTi1−x)O3 (PZT) thin films preparation to develop a new combinatorial process by chemical solution deposition (CSD) method. PZT thin films were fabricated from the PbZrO3 (PZ) and PbTiO3 (PT) multilayers on a substrate of Si/SiO2/Ti/Pt. The precursor PT and PZ solutions were coated in different sequences, (i) in the PT start sequence and (ii) in the PZ start sequence, and with different PT and PZ concentrations. It was found that the deposition sequence of PT and PZ led to the differences in composition, microstructure, texture, and ferroelectric property of the resultant thin films. The PT start deposition was suitable for preparation of the PZT thin films, while the PZ start deposition caused composition deviation and bad ferroelectric property. The postannealing had little effect for the formation of the PZT thin films from the multi-PT and PZ layers. A single perovskite phase of PZT can be obtained from the deposited multi-PT and PZ layers even without any postannealing when concentrations of the precursor PT and PZ solution are smaller than 0.025 M and the deposition sequence is in the PT start sequence. This method would be a constructive way to develop and study other thin film materials systems.

Synthesis of precursors for chemical solution deposition of PZT thin films

1999 ◽  
Vol 122 (1) ◽  
pp. 44-50 ◽  
Author(s):  
R. Caruso ◽  
O. de Sanctis ◽  
A. Frattini ◽  
C. Steren ◽  
R. Gil
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Pzt Thin Films
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