scholarly journals Low Temperature Synthesis of Sub-micrometer Yttria-doped Barium Zirconate Thin Films by Modified Chemical Solution Deposition Technique

2015 ◽  
Vol 68 (1) ◽  
pp. 481-488 ◽  
Author(s):  
M. Biswas ◽  
H. Xie ◽  
P.-C. Su
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Chemical Solution Deposition ◽  
Barium Zirconate ◽  
Chemical Solution ◽  
Deposition Technique ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Solution Deposition

Preparation and characterization of Bi2Ti2O7 thin films by chemical solution deposition technique

2000 ◽  
Vol 370 (1-2) ◽  
pp. 30-32 ◽  
Author(s):  
XianMing Wu ◽  
Sh.W. Wang ◽  
H. Wang ◽  
Z. Wang ◽  
S.X. Shang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Deposition Technique ◽  
Solution Deposition

scholarly journals Nanostructure stabilization by low-temperature dopant pinning in multiferroic BiFeO3-based thin films produced by aqueous chemical solution deposition

2020 ◽  
Vol 8 (12) ◽  
pp. 4234-4245 ◽  
Author(s):  
Carlos Gumiel ◽  
Teresa Jardiel ◽  
David G. Calatayud ◽  
Thomas Vranken ◽  
Marlies K. Van Bael ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Chemical Solution Deposition ◽  
Single Phase ◽  
Aqueous Media ◽  
Processing Conditions ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Multiferroic Bifeo3

BiFeO3 single-phase thin films with an effective and tuneable multiferroic response are obtained in aqueous media by using mild processing conditions.

scholarly journals Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications

1999 ◽  
Vol 14 (5) ◽  
pp. 1860-1864 ◽  
Author(s):  
C. R. Foschini ◽  
P. C. Joshi ◽  
J. A. Varela ◽  
S. B. Desu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Current Density ◽  
Chemical Solution Deposition ◽  
Random Access ◽  
Random Access Memory ◽  
Chemical Solution ◽  
Deposition Technique ◽  
Access Memory ◽  
Solution Deposition

We report on the properties of BaBi2Ta2O9 (BBT) thin films for dynamic random-access memory (DRAM) and integrated capacitor applications. Crystalline BBT thin films were successfully fabricated by the chemical solution deposition technique on Pt-coated Si substrates at a low annealing temperature of 650 °C. The films were characterized in terms of structural, dielectric, and insulating properties. The electrical measurements were conducted on Pt/BBT/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor, at 100 kHz, were 282 and 0.023, respectively, for films annealed at 700 °C for 60 min. The leakage current density of the films was lower than 10−9 A/cm2 at an applied electric field of 300 kV/cm. A large storage density of 38.4 fC/μm2 was obtained at an applied electric field of 200 kV/cm. The high dielectric constant, low dielectric loss and low leakage current density suggest the suitability of BBT thin films as dielectric layer for DRAM and integrated capacitor applications.

Fabrication of M3+-Substituted and M3+/V5+-Cosubstituted Bismuth Titanate Thin Films [M=lanthanoid] by Chemical Solution Deposition Technique

2002 ◽  
Vol 41 (Part 1, No. 11B) ◽  
pp. 6820-6824 ◽  
Author(s):  
Hiroshi Uchida ◽  
Hiroki Yoshikawa ◽  
Isao Okada ◽  
Hirofumi Matsuda ◽  
Takashi Iijima ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Bismuth Titanate ◽  
Chemical Solution ◽  
Deposition Technique ◽  
Solution Deposition
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