Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Room-Temperature Gas Detection

ECS Meeting Abstracts ◽

10.1149/ma2020-01312319mtgabs ◽

2020 ◽

Vol MA2020-01 (31) ◽

pp. 2319-2319

Author(s):

Zhixiang Hu ◽

Jingyao Liu ◽

Licheng Zhou ◽

Long Li ◽

Yunong Zhao ◽

...

Keyword(s):

Quantum Dots ◽

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistor ◽

Gas Detection ◽

High Electron ◽

High Electron Mobility

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Nondestructive determination of sheet carrier density in pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures by room-temperature photoluminescence spectra

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/31/2/001 ◽

1998 ◽

Vol 31 (2) ◽

pp. 159-164 ◽

Author(s):

Wu Lu ◽

Jin-Hee Lee ◽

Krishnamachar Prasad ◽

Geok-Ing Ng ◽

Per Lindström

Keyword(s):

Electron Mobility ◽

Carrier Density ◽

Room Temperature ◽

High Electron Mobility Transistor ◽

High Electron ◽

Photoluminescence Spectra ◽

High Electron Mobility ◽

Room Temperature Photoluminescence ◽

Nondestructive Determination

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Tailoring the H2 gas detection range of the AlGaN/GaN high electron mobility transistor by tuning the Pt gate thickness

International Journal of Hydrogen Energy ◽

10.1016/j.ijhydene.2021.10.229 ◽

2021 ◽

Author(s):

Aihua Zhong ◽

Aifa Sun ◽

Bowei Shen ◽

Huimin Yu ◽

Yue Zhou ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

Gas Detection ◽

High Electron ◽

Detection Range ◽

High Electron Mobility

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InP/ZnS quantum dots functionalized AlGaAs/InGaAs open gate high electron mobility transistor

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-018-9134-9 ◽

2018 ◽

Vol 29 (12) ◽

pp. 10663-10668 ◽

Author(s):

Dongyan Zhang ◽

Zhimin Li

Keyword(s):

Quantum Dots ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Nonresonant Detection of Terahertz Radiation in High-Electron-Mobility Transistor Structure Using InAlAs/InGaAs/InP Material Systems at Room Temperature

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2012.4575 ◽

2012 ◽

Vol 12 (8) ◽

pp. 6737-6740 ◽

Author(s):

A. El Moutaouakil ◽

T. Suemitsu ◽

T. Otsuji ◽

D. Coquillat ◽

W. Knap

Keyword(s):

Terahertz Radiation ◽

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistor ◽

High Electron ◽

Transistor Structure ◽

High Electron Mobility ◽

Material Systems

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Room-temperature memory operation of AlGaAs/GaAs high electron mobility transistors with InAs quantum dots embedded in the channel

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) ◽

10.1109/iedm.2000.904392 ◽

2002 ◽

Author(s):

Jae-Eung Oh ◽

Jong-Wook Kim

Keyword(s):

Quantum Dots ◽

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistors ◽

High Electron ◽

Inas Quantum Dots ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2837839 ◽

2008 ◽

Vol 26 (3) ◽

pp. 1174 ◽

Author(s):

M. A. Rowe ◽

E. J. Gansen ◽

M. B. Greene ◽

D. Rosenberg ◽

T. E. Harvey ◽

...

Keyword(s):

Quantum Dots ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Photon Detection ◽

High Electron Mobility

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Room temperature photoluminescence studies of δ-doped pseudomorphic high electron mobility transistor AlGaAs/InGaAs/GaAs structures

Solid State Communications ◽

10.1016/0038-1098(96)00223-2 ◽

1996 ◽

Vol 99 (10) ◽

pp. 713-716 ◽

Author(s):

Wu Lu ◽

Jin-Hee Lee ◽

Hyung-Sup Yoon ◽

Chul-Soon Park ◽

Kwang-Eui Pyun ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Room Temperature Photoluminescence ◽

Photoluminescence Studies

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Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles

Semiconductor Science and Technology ◽

10.1088/0268-1242/14/1/017 ◽

1999 ◽

Vol 14 (1) ◽

pp. 103-109 ◽

Author(s):

D Y Lin ◽

Y S Huang ◽

K K Tiong ◽

F H Pollak ◽

K R Evans

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Room temperature polarized photoreflectance and photoluminescence characterization of AlGaAs/InGaAs/GaAs high electron mobility transistor structures

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/s1386-9477(00)00165-x ◽

2000 ◽

Vol 8 (4) ◽

pp. 297-305 ◽

Author(s):

T.H. Chen ◽

Y.S. Huang ◽

T.S. Shou ◽

K.K. Tiong ◽

D.Y. Lin ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation

Journal of Applied Physics ◽

10.1063/1.373751 ◽

2000 ◽

Vol 88 (2) ◽

pp. 883-888 ◽

Author(s):

T. H. Chen ◽

Y. S. Huang ◽

D. Y. Lin ◽

Fred H. Pollak ◽

M. S. Goorsky ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

Strain Relaxation ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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