An ion flux probe for a low pressure discharge plasma

1973 ◽  
Vol 6 (5) ◽  
pp. 439-442
Author(s):  
S Torven ◽  
M Babic
Keyword(s):  
Discharge Plasma ◽  
Low Pressure ◽  
Ion Flux ◽  
Pressure Discharge ◽  
Flux Probe

scholarly journals Deposition of Al2O3 coatings in Ar-O2 low-pressure discharge plasma under a high dissociation degree of O2

2021 ◽  
Vol 2064 (1) ◽  
pp. 012047
Author(s):  
P V Tretnikov ◽  
N V Gavrilov ◽  
A S Kamenetskikh ◽  
S V Krivoshapko ◽  
A V Chukin
Keyword(s):  
Atomic Oxygen ◽  
Evaporation Rate ◽  
Discharge Plasma ◽  
Low Pressure ◽  
Constant Current ◽  
Anode Region ◽  
Corundum Structure ◽  
Pressure Discharge ◽  
Dissociation Degree ◽  
Combined Mode

Abstract The deposition of Al2O3 coating with a corundum structure was done by anodic evaporation in a low-pressure arc with a self-heated hollow cathode. The conditions were created for increasing the energy of plasma electrons and a corresponding increase in the frequency of O2 dissociation by contraction of the discharge in the anode region. The discharge was maintained in a combined mode with a constant current (70 – 100 A), on which current pulses (100 μs, 1 kHz) with adjustable amplitude (up to 220 A) were superimposed. This mode ensured a change in the degree of O2 dissociation in the range of 0.3 – 0.5 at constant average discharge current and Al evaporation rate. It is shown that an increase in the degree of O2 dissociation leads to an increase in the rate of coating deposition by a factor of 1.3 and promotion of the preferred (300) orientation of crystallites. The effect is due to the features of the adsorption of molecular and atomic oxygen on the Al2O3.

scholarly journals Diagnostics of etching plasmas

2002 ◽  
Vol 74 (3) ◽  
pp. 397-400 ◽  
Author(s):  
Jean-Paul Booth
Keyword(s):  
Radio Frequency ◽  
Absorption Spectroscopy ◽  
Plasma Etching ◽  
Integrated Circuit ◽  
Low Pressure ◽  
Ion Flux ◽  
Reactor Performance ◽  
Polymer Layers ◽  
Flux Probe

Radio-frequency excited, low-pressure plasmas in halogen-containing gases are widely used to etch submicronic features in a range of materials during integrated circuit manufacture. Costly process-drift problems are often caused by the ubiquitous deposition of polymer layers on the reactor walls. Simple and robust sensors of the reactor performance are needed to monitor and manage these effects. This paper presents results obtained in industrial plasma-etching machines using a deposition-tolerant ion flux probe and broadband UV­vis absorption spectroscopy.

scholarly journals Low-Pressure Discharge Plasma Treatment of Aqueous Solutions with Mn, Cr and Fe

2019 ◽  
Vol 13 (3) ◽  
pp. 317-325 ◽  
Author(s):  
Oleksandr Pivovarov ◽  
◽  
Tetiana Derkach ◽  
Margarita Skiba ◽  
◽  
...  
Keyword(s):  
Aqueous Solutions ◽  
Plasma Treatment ◽  
Discharge Plasma ◽  
Low Pressure ◽  
Pressure Discharge

A Simple Ion Flux Estimation in a Low Pressure R.F. Plasma (13.56 MHz)

1997 ◽  
Vol 7 (4) ◽  
pp. 937-950
Author(s):  
I. Grenier ◽  
V. Massereau ◽  
A. Celerier ◽  
J. Machet
Keyword(s):  
Low Pressure ◽  
Ion Flux ◽  
Flux Estimation
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