C-axis Oriented AlN Thin Films on Silicon Prepared by Ultrahigh Vacuum Evaporation of Al Combined with Post-Nitridation

1998 ◽  
Vol 15 (10) ◽  
pp. 732-733 ◽  
Author(s):  
Ji-po Huang ◽  
Lian-wei Wang ◽  
Qin-wo Shen ◽  
Jian-xia Gao ◽  
Ru-shan Ni ◽  
...  
1986 ◽  
Vol 4 (3) ◽  
pp. 524-527 ◽  
Author(s):  
S. A. Wolf ◽  
S. B. Qadri ◽  
J. H. Claassen ◽  
T. L. Francavilla ◽  
B. J. Dalrymple

2008 ◽  
Author(s):  
Ajit Mahadkar ◽  
Alka Chauhan ◽  
Madhavi Thakurdesai ◽  
Deepak Gaikwad ◽  
P. Predeep ◽  
...  

1993 ◽  
Vol 311 ◽  
Author(s):  
W.W. Hsieh ◽  
J.J. Lin ◽  
M.M. Wang ◽  
L.L. Chen

ABSTRACTSimultaneous occurrence of multiphases was observed in the interfacial reactions of ultrahigh vacuum deposited Ti, Hf and Cr thin films on (111)Si by high resolution transmission electron microscopy in conjunction with fast Fourier transform diffraction analysis and image simulation. For the three systems, an amorphous interlayer as well as a number of crystalline phase were found to form simultaneously in the early stages of interfacial reactions. The formation of multiphases appeared to be quite general in the initial stages of interfacial reactions of UHV deposited refractory thin films. The results called for a reexamination of generally accepted “difference” in reaction sequence between bulk and thin film couples.


Author(s):  
V. DIETZ ◽  
P. EHRHART ◽  
D. GUGGI ◽  
H.-G. HAUBOLD ◽  
W. JÄGER ◽  
...  

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