scholarly journals Ultrahigh vacuum deposition of higher manganese silicide Mn4Si7 thin films

2015 ◽  
Vol 33 (6) ◽  
pp. 060603 ◽  
Author(s):  
Rajendra P. Dulal ◽  
Bishnu R. Dahal ◽  
Ian L. Pegg ◽  
John Philip
Keyword(s):  
Thin Films ◽  
Ultrahigh Vacuum ◽  
Vacuum Deposition ◽  
Higher Manganese Silicide ◽  
Manganese Silicide

Interband optical properties of higher manganese silicide thin films

2002 ◽  
Vol 81 (4) ◽  
pp. 649-651 ◽  
Author(s):  
M. Rebien ◽  
W. Henrion ◽  
H. Angermann ◽  
S. Teichert
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Higher Manganese Silicide ◽  
Manganese Silicide

Preparation and optical properties of higher manganese silicide, (Mn,Fe)Si , thin films

2018 ◽  
Vol 458 ◽  
pp. 700-704
Author(s):  
Kei Hayashi ◽  
Kentaro Ishii ◽  
Chihiro Kawasaki ◽  
Ryosuke Honda ◽  
Yuzuru Miyazaki
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Higher Manganese Silicide ◽  
Manganese Silicide

scholarly journals Vacuum Deposition of Thin Films

1957 ◽  
Vol 104 (5) ◽  
pp. 116C ◽  
Author(s):  
L. Holland ◽  
Joseph Greenspan
Keyword(s):  
Thin Films ◽  
Vacuum Deposition

Use of helium flush in the vacuum deposition of thin films

1961 ◽  
Vol 12 (5) ◽  
pp. 255-256 ◽  
Author(s):  
G N Srivastava ◽  
G D Scott
Keyword(s):  
Thin Films ◽  
Vacuum Deposition

Simultaneous Occurrence of Multiphases in the Interfacial Reactions of Ultrahigh Vacuum Deposited Ti, Hf and Cr Thin Films on (111)Si

1993 ◽  
Vol 311 ◽  
Author(s):  
W.W. Hsieh ◽  
J.J. Lin ◽  
M.M. Wang ◽  
L.L. Chen
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Ultrahigh Vacuum ◽  
Interfacial Reactions ◽  
Simultaneous Occurrence ◽  
Image Simulation ◽  
Reaction Sequence ◽  
Transmission Electron ◽  
Amorphous Interlayer

ABSTRACTSimultaneous occurrence of multiphases was observed in the interfacial reactions of ultrahigh vacuum deposited Ti, Hf and Cr thin films on (111)Si by high resolution transmission electron microscopy in conjunction with fast Fourier transform diffraction analysis and image simulation. For the three systems, an amorphous interlayer as well as a number of crystalline phase were found to form simultaneously in the early stages of interfacial reactions. The formation of multiphases appeared to be quite general in the initial stages of interfacial reactions of UHV deposited refractory thin films. The results called for a reexamination of generally accepted “difference” in reaction sequence between bulk and thin film couples.

Influence of the Sintering Temperature of Al-Doped Higher Manganese Silicide for Improved Thermoelectric Properties

2019 ◽  
Vol 19 (3) ◽  
pp. 1699-1703 ◽  
Author(s):  
Si-Young Son ◽  
Yeon-Jin Baek ◽  
Ji-Hyun Beck ◽  
Jong-Bae Kim ◽  
Seung-Ho Yang ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Sintering Temperature ◽  
Higher Manganese Silicide ◽  
Manganese Silicide
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