Synthesis and Characterization of the Thin Films NiSe2/Si Heterojunction for Solar Cells

Thin film solar cells are preferable to the researchers and in applications due to the minimum material usage and to the rising of their efficiencies. In particular, thin film solar cells, which are designed based one transition metal chalcogenide materials, paly an essential role in solar energy conversion market. In this paper, transition metals with chalcogenide Nickel selenide termed as (NiSe2/Si) are synthesized. To this end, polycrystalline NiSe2 thin films are deposited through the use of vacuum evaporation technique under vacuum of 2.1x10-5 mbar, which are supplied to different annealing temperatures. The results show that under an annealed temperature of 525 K, the nickel sulfoselenide thin films are polycrystalline with an efficient regularity and best crystalline quality. In addition, the results demonstrate that the intersection argument for the optical properties under investigation provid the direct bandgap, over which the films have inferred on variety (1.55 and 1.75 eV). Overall, the results illustrate that an efficiency of 2.89% can be achieved with 525 K temperature.

Effect of Pb dopant On A.C mechanism of ZnS thin films

Vacuum evaporation technique was used to prepare pure and doped ZnS:Pb thin films at10% atomic weight of Pb element onto glass substrates at room temperature for 200 nm thickness. Effect of doping on a.c electrical properties such as, a.c conductivity, real, and imaginary parts of dielectric constant within frequency range (10 KHz - 10 MHz) are measured. The frequency dependence of a.c conductivity is matched with correlated barrier hoping especially at higher frequency. Effect of doping on behavior of a.c mechanism within temperature range 298-473 K was studied.

Studying the effect of impurities Bi2O3 to SiO2 used in LCD screens

In this study, a liquid crystal display LCD cell was prepared. with the windows made from a thin film of SnO2 add to it Bi2O3 by weight (0,1,3,5,7)% .The effect of adding optical and electrical properties of the cell was studied. The thin film was prepared by vacuum evaporation technique. It was added to use powder mixing technique. The results showed a decrease in the value of the current passing through the cell and an increase in resistance value from 9.7MΩ to 12.5MΩ. The results also showed an increase in the cell's ability to control the light and darkness it with lower voltages by increasing the add rate. This leads to a decrease power used of a single cell. The value of the capacitance is not affected by the addition of Bi2O3 and was stable at ( 3nf ±1% ). http://dx.doi.org/10.25130/tjps.23.2018.175

Effect the Thickness on the Electrical Properties and (I-V) Character of the (CdTe) Thin Films and Find the Efficiency of Solar Cell CdTe/CdS

Thin films of CdTe were prepared with thickness (500, 1000) nm on the glass substrate by vacuum evaporation technique at room temperature then treated different annealing temperatures (373,473,and 573)K for one hour. Results of the Hall Effect and the electrical conductivity of (I-V) characteristics were measured in darkness and light.at different annealing temperature results show that the thin films have ability to manufacture solar cells, and found that the efficient equal to (2.18%) for structure solar cell (Algrid / CdS / CdTe /glass/ Al) and the efficient equal to (1.12%) for structure solar cell (Algrid / CdS / CdTe /Si/ Al) with thick ness of (1000) nm with CdTe thin films at RT.