Influence of Oxygen Vacancy on Transport Property in Perovskite Oxide Heterostructures

It has been realized lately that disorder, primarily in the form of oxygen vacancies, cation stoichiometry, atomic inter-diffusion and antisite defects, has a major effect on the electronic and transport properties of a 2D electron liquid at oxide hetero-interfaces – the first and the last being the two key players.

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Tunable Oxygen Vacancy Formation Energetics in the Complex Perovskite Oxide SrxLa1–xMnyAl1–yO3

Chemistry of Materials ◽

10.1021/cm5033755 ◽

2014 ◽

Vol 26 (22) ◽

pp. 6595-6602 ◽

Cited By ~ 51

Author(s):

Ann M. Deml ◽

Vladan Stevanović ◽

Aaron M. Holder ◽

Michael Sanders ◽

Ryan O’Hayre ◽

...

Keyword(s):

Oxygen Vacancy ◽

Perovskite Oxide ◽

Vacancy Formation ◽

Complex Perovskite ◽

Oxygen Vacancy Formation

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Carbon- and binder-free 3D porous perovskite oxide air electrode for rechargeable lithium–oxygen batteries

Journal of Materials Chemistry A ◽

10.1039/c6ta10751f ◽

2017 ◽

Vol 5 (11) ◽

pp. 5283-5289 ◽

Cited By ~ 31

Author(s):

Thien Viet Pham ◽

Hai Peng Guo ◽

Wen Bin Luo ◽

Shu Lei Chou ◽

Jia Zhao Wang ◽

...

Keyword(s):

Oxygen Vacancy ◽

Lattice Strain ◽

Perovskite Oxide ◽

Excellent Performance ◽

Air Electrode ◽

Binder Free ◽

Lithium Oxygen Batteries

Porous LaNi0.9Cu0.1O3 nanosheets exhibit excellent performance in Li–O2 batteries because of abundant lattice strain and the oxygen vacancy effect.

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Oxygen Vacancy Promoted O2 Activation over Perovskite Oxide for Low-Temperature CO Oxidation

ACS Catalysis ◽

10.1021/acscatal.9b02408 ◽

2019 ◽

Vol 9 (11) ◽

pp. 9751-9763 ◽

Cited By ~ 29

Author(s):

Ji Yang ◽

Siyu Hu ◽

Yarong Fang ◽

Son Hoang ◽

Li Li ◽

...

Keyword(s):

Low Temperature ◽

Oxygen Vacancy ◽

Co Oxidation ◽

Perovskite Oxide ◽

O2 Activation ◽

Low Temperature Co Oxidation

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Quantum confinement in perovskite oxide heterostructures: Tight binding instead of a nearly free electron picture

Physical Review B ◽

10.1103/physrevb.88.125401 ◽

2013 ◽

Vol 88 (12) ◽

Cited By ~ 23

Author(s):

Zhicheng Zhong ◽

Qinfang Zhang ◽

Karsten Held

Keyword(s):

Free Electron ◽

Quantum Confinement ◽

Tight Binding ◽

Perovskite Oxide ◽

Oxide Heterostructures

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A numerical design of opto-thermionic refrigeration with perovskite oxide heterostructures

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/42/12/125109 ◽

2009 ◽

Vol 42 (12) ◽

pp. 125109 ◽

Cited By ~ 2

Author(s):

Li-li Zhang ◽

Peng Han ◽

Kui-juan Jin ◽

Leng Liao ◽

Chun-lian Hu ◽

...

Keyword(s):

Perovskite Oxide ◽

Oxide Heterostructures ◽

Numerical Design

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RESISTIVE SWITCHING PHENOMENA IN COMPLEX OXIDE HETEROSTRUCTURES

Modern Physics Letters B ◽

10.1142/s0217984913300214 ◽

2013 ◽

Vol 27 (29) ◽

pp. 1330021 ◽

Cited By ~ 2

Author(s):

YU-LING JIN ◽

KUI-JUAN JIN ◽

CHEN GE ◽

HUI-BIN LU ◽

GUO-ZHEN YANG

Keyword(s):

Resistive Switching ◽

Oxygen Vacancies ◽

Complex Oxide ◽

Perovskite Oxide ◽

Ferroelectric Polarization ◽

Oxide Heterostructures ◽

Polarization Voltage ◽

Data Memory ◽

Current Voltage

Resistive memories based on the resistive switching effect have promising application in the ultimate nonvolatile data memory field. This brief review focuses on the resistive switching phenomena in the perovskite oxide heterostructures, which originate from the modulation of the interface properties due to the movement of the oxygen vacancies and the ferroelectric polarization. Many recent experiments have been carried out to demonstrate the role of the oxygen vacancies by controlling the content of the oxygen vacancies in the oxide heterostructures with plenty of oxygen vacancies. The important role of the ferroelectric polarization was also carefully confirmed by analyzing the relationship between the current–voltage and polarization–voltage loops in the ferroelectric oxide heterostructures. The physical mechanisms have been revealed based on the developed numerical model.

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