scholarly journals RESISTIVE SWITCHING PHENOMENA IN COMPLEX OXIDE HETEROSTRUCTURES

2013 ◽  
Vol 27 (29) ◽  
pp. 1330021 ◽  
Author(s):  
YU-LING JIN ◽  
KUI-JUAN JIN ◽  
CHEN GE ◽  
HUI-BIN LU ◽  
GUO-ZHEN YANG
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Complex Oxide ◽  
Perovskite Oxide ◽  
Ferroelectric Polarization ◽  
Oxide Heterostructures ◽  
Polarization Voltage ◽  
Data Memory ◽  
Current Voltage

Resistive memories based on the resistive switching effect have promising application in the ultimate nonvolatile data memory field. This brief review focuses on the resistive switching phenomena in the perovskite oxide heterostructures, which originate from the modulation of the interface properties due to the movement of the oxygen vacancies and the ferroelectric polarization. Many recent experiments have been carried out to demonstrate the role of the oxygen vacancies by controlling the content of the oxygen vacancies in the oxide heterostructures with plenty of oxygen vacancies. The important role of the ferroelectric polarization was also carefully confirmed by analyzing the relationship between the current–voltage and polarization–voltage loops in the ferroelectric oxide heterostructures. The physical mechanisms have been revealed based on the developed numerical model.

Polarization-induced resistive switching behaviors in complex oxide heterostructures

2015 ◽  
Vol 107 (12) ◽  
pp. 122905 ◽  
Author(s):  
Lei Wu ◽  
Chao Zhang ◽  
Chunhui Dong ◽  
Chenglong Jia ◽  
Changjun Jiang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Complex Oxide ◽  
Oxide Heterostructures

Role of oxygen vacancies for resistive switching in noble metal sandwiched Pr0.67Ca0.33MnO3-δ

2017 ◽  
Vol 110 (24) ◽  
pp. 243502 ◽  
Author(s):  
Thilo Kramer ◽  
Malte Scherff ◽  
Daniel Mierwaldt ◽  
Joerg Hoffmann ◽  
Christian Jooss
Keyword(s):  
Noble Metal ◽  
Resistive Switching ◽  
Oxygen Vacancies

scholarly journals The role of oxygen vacancies on resistive switching properties of oxide materials

2020 ◽  
Vol 7 (5) ◽  
pp. 665-683
Author(s):  
Hang Meng ◽  
◽  
Shihao Huang ◽  
Yifeng Jiang
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Oxide Materials

scholarly journals The role of oxygen vacancies in the high cycling endurance and quantum conductance in BiVO 4 ‐based resistive switching memory

InfoMat ◽  
2020 ◽  
Vol 2 (5) ◽  
pp. 960-967 ◽  
Author(s):  
Mengting Zhao ◽  
Xiaobing Yan ◽  
Long Ren ◽  
Mengliu Zhao ◽  
Fei Guo ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Quantum Conductance ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Resistive switching behavior in α-In2Se3 nanoflakes modulated by ferroelectric polarization and interface defects

RSC Advances ◽  
2019 ◽  
Vol 9 (52) ◽  
pp. 30565-30569 ◽  
Author(s):  
Pengfei Hou ◽  
Siwei Xing ◽  
Xin Liu ◽  
Cheng Chen ◽  
Xiangli Zhong ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Switching Behavior ◽  
Ferroelectric Polarization ◽  
Resistive Switching Behavior ◽  
Free Carriers ◽  
Interface Defects ◽  
Out Of Plane ◽  
Planar Device

A planar device based on an α-In2Se3 nanoflake, in which the in-plane/out-of-plane polarization, free carriers and oxygen vacancies in SiO2 contribute to the resistive switching behavior of the device.

Thickness-Dependent Bipolar Resistive Switching Behaviors of NiOx Films

2016 ◽  
Vol 847 ◽  
pp. 131-136 ◽  
Author(s):  
Hua Xing Zhu ◽  
Jin Qian Huo ◽  
Xiao Yan Qiu ◽  
Yi Yang Zhang ◽  
Rui Xue Wang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Resistive Switching ◽  
Redox Reactions ◽  
Oxygen Vacancies ◽  
Bipolar Resistive Switching ◽  
Oxygen Ions ◽  
Current Voltage ◽  
20 Nm

Oxygen-rich polycrystalline NiOx films were prepared by means of magnetron sputtering. Thickness-dependent bipolar resistive switching behaviors revealed that the 20 nm-thick NiOx film presented a clockwise current-voltage loop, while the 60 nm-thick NiOx film achieved an anti-clockwise current-voltage loop. Redox reactions between penetrated Ag ions and drifted oxygen ions in the whole 20 nm-thick NiOx films resulted in the clockwise current-voltage loops. Filamentary conducting paths composed by oxygen vacancies were responsible for the anti-clockwise resistive switching loops of the 60 nm-thick NiOx film.

Non-volatile ferroelectric control of room-temperature electrical transport in perovskite oxide semiconductor La:BaSnO3

2017 ◽  
Vol 5 (45) ◽  
pp. 11763-11768 ◽  
Author(s):  
Seungyang Heo ◽  
Daseob Yoon ◽  
Sangbae Yu ◽  
Junwoo Son ◽  
Hyun Myung Jang
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Room Temperature ◽  
Complex Oxide ◽  
Oxide Semiconductor ◽  
Perovskite Oxide ◽  
Polarization Reversal ◽  
Oxide Heterostructures ◽  
Semiconductor Thin Films ◽  
Substantial Interest

Complex oxide heterostructures composed of oxide semiconductor thin films and ferroelectric single crystals have attracted substantial interest due to the electrically switchable channel resistance by the polarization reversal of ferroelectrics.

Role of oxygen vacancies in resistive switching in Pt/Nb-doped SrTiO3

2014 ◽  
Vol 105 (18) ◽  
pp. 183103 ◽  
Author(s):  
Jinho Park ◽  
Deok-Hwang Kwon ◽  
Hongwoo Park ◽  
C. U. Jung ◽  
M. Kim
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies

Fabrication and Electric Properties of SrTiO3-δ/Nb-SrTiO3 Heterjunction

2009 ◽  
Vol 79-82 ◽  
pp. 2159-2162 ◽  
Author(s):  
Mu Cui Ni ◽  
Yan Hong Wang ◽  
Hai Ying Li ◽  
Jia Yi Liu ◽  
Zhi Jun Wang ◽  
...  
Keyword(s):  
Space Charge ◽  
Conduction Mechanism ◽  
Forward Bias ◽  
Perovskite Oxide ◽  
Oxide Materials ◽  
Microelectronic Devices ◽  
Current Voltage ◽  
Potential Applications ◽  
High Bias

SrTiO3- (STO) thin film has been deposited epitaxially on the (100) oriented, 0.1 wt % Nb-doped SrTiO3 (NSTO) substrate using the pulsed laser deposition technique. The current-voltage (I-V) characteristics of STO/NSTO heterojunction at various temperatures had been measured. A rectifying behavior similar to conventional diodes was observed. For the forward bias, the conduction mechanism changes from Ohmic-like for the low bias voltages to space charge limited current for the high bias voltages. The results were explained by considering the band structures of the heterojunction and the role of space charge layer formed at the interface between STO and NSTO. Our results demonstrate that the interface formed between two oxide materials plays an important role on transport characters of the system and can lead to some potential applications in future microelectronic devices based on combination of two perovskite oxide materials.

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