Dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing
2001 ◽
Vol 16
(10)
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pp. 826-830
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2009 ◽
Vol 32
(3)
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pp. 391-396
2008 ◽
Vol 155
(12)
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pp. H987
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2016 ◽
Vol 16
(5)
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pp. 4919-4923
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2005 ◽
Vol 2
(7)
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pp. 2623-2626
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2009 ◽
Vol 193
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pp. 012068
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2018 ◽
Vol 94
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pp. 19-25
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2008 ◽
Vol 47
(4)
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pp. 2820-2823
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