Dual-gate AlGaN/GaN high-electron-mobility transistors with short gate length for high-power mixers

2006 ◽  
Vol 3 (3) ◽  
pp. 469-472
Author(s):  
K. Shiojima ◽  
T. Makimura ◽  
T. Maruyama ◽  
T. Kosugi ◽  
T. Suemitsu ◽  
...  
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Dual Gate

AlGaN/GaN dual-gate high electron mobility transistors on SiC substrates for high-power mixers

2005 ◽  
Vol 2 (7) ◽  
pp. 2623-2626 ◽  
Author(s):  
K. Shiojima ◽  
T. Makimura ◽  
T. Kosugi ◽  
S. Sugitani ◽  
N. Shigekawa ◽  
...  
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Dual Gate

Dual Gate-Recess Structure of Metamorphic High-Electron-Mobility Transistors for Enhancing f[sub max]

2008 ◽  
Vol 155 (12) ◽  
pp. H987 ◽  
Author(s):  
Jung-Hun Oh ◽  
Min Han ◽  
Sung-Woon Moon ◽  
Seokhun Lee ◽  
In-Seok Hwang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Dual Gate ◽  
Gate Recess
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