Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor
2006 ◽
Vol 21
(12)
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pp. 1733-1737
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1999 ◽
Vol 46
(6)
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pp. 1207-1211
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2002 ◽
Vol 49
(12)
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pp. 2099-2106
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2010 ◽
Vol 157
(3)
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pp. H381
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2004 ◽
Vol 22
(6)
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pp. 2727
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2000 ◽
Vol 15
(9)
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pp. 935-940
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