Modeling the temperature-dependent Early voltage of a silicon germanium heterojunction bipolar transistor

S.A. Wartenberg; C.R. Westgate

doi:10.1109/16.766886

Modeling the temperature-dependent Early voltage of a silicon germanium heterojunction bipolar transistor

IEEE Transactions on Electron Devices ◽

10.1109/16.766886 ◽

1999 ◽

Vol 46 (6) ◽

pp. 1207-1211 ◽

Cited By ~ 1

Author(s):

S.A. Wartenberg ◽

C.R. Westgate

Keyword(s):

Silicon Germanium ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Temperature Dependent

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A single-event transient induced by a pulsed laser in a silicon—germanium heterojunction bipolar transistor

Chinese Physics B ◽

10.1088/1674-1056/22/5/056103 ◽

2013 ◽

Vol 22 (5) ◽

pp. 056103 ◽

Cited By ~ 3

Author(s):

Ya-Bin Sun ◽

Jun Fu ◽

Jun Xu ◽

Yu-Dong Wang ◽

Wei Zhou ◽

...

Keyword(s):

Silicon Germanium ◽

Pulsed Laser ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Single Event ◽

Single Event Transient

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Numerical simulation of Silicon-Germanium Heterojunction Bipolar Transistor (HBT) in silvaco/atlas and analysis of HBT base transit time to achieve faster operation

2015 International Conference on Electrical Engineering and Information Communication Technology (ICEEICT) ◽

10.1109/iceeict.2015.7307345 ◽

2015 ◽

Author(s):

Upoma Saha ◽

Fahmi Imteaz ◽

Oishi Prova Saleque ◽

Md. Mehedi Hassan Shohag ◽

Bishwajit Debnath

Keyword(s):

Numerical Simulation ◽

Transit Time ◽

Silicon Germanium ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Silvaco Atlas

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Silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) and bipolar complementary metal oxide semiconductor (BiCMOS) technologies

Silicon–Germanium (SiGe) Nanostructures ◽

10.1533/9780857091420.4.473 ◽

2011 ◽

pp. 473-498

Author(s):

K. Washio

Keyword(s):

Metal Oxide ◽

Silicon Germanium ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Oxide Semiconductor

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Silicon germanium heterojunction bipolar transistor electrostatic discharge power clamps and the Johnson Limit in RF BICMOS SiGe technology

Journal of Electrostatics ◽

10.1016/s0304-3886(02)00064-5 ◽

2002 ◽

Vol 56 (3) ◽

pp. 341-362 ◽

Cited By ~ 2

Author(s):

Steven H Voldman ◽

Brian Ronan ◽

Patrick A Juliano ◽

Alan Botula ◽

David T Hui ◽

...

Keyword(s):

Silicon Germanium ◽

Electrostatic Discharge ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Discharge Power

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Silicon Germanium Heterojunction Bipolar Transistor for Digital Application

TELKOMNIKA (Telecommunication Computing Electronics and Control) ◽

10.12928/telkomnika.v10i3.828 ◽

2012 ◽

Vol 10 (3) ◽

pp. 493

Author(s):

Engelin Shintadewi Julian

Keyword(s):

Silicon Germanium ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor

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Silicon Germanium Heterojunction Bipolar Transistor for Digital Application

TELKOMNIKA Indonesian Journal of Electrical Engineering ◽

10.11591/telkomnika.v10i3.609 ◽

2012 ◽

Vol 10 (3) ◽

Author(s):

Engelin Shintadewi Julian

Keyword(s):

Silicon Germanium ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor

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Silicon-Germanium Heterojunction Bipolar Transistor

Device and Circuit Cryogenic Operation for Low Temperature Electronics ◽

10.1007/978-1-4757-3318-1_4 ◽

2001 ◽

pp. 69-84 ◽

Cited By ~ 5

Author(s):

John D. Cressler

Keyword(s):

Silicon Germanium ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor

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The Role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile Technology Platforms

10.21236/ada552934 ◽

2011 ◽

Author(s):

Gregory A. Mitchell

Keyword(s):

Mobile Technology ◽

Silicon Germanium ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Technology Platforms

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Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor

Semiconductor Science and Technology ◽

10.1088/0268-1242/21/12/040 ◽

2006 ◽

Vol 21 (12) ◽

pp. 1733-1737 ◽

Cited By ~ 1

Author(s):

Tzu-Pin Chen ◽

Ssu-I Fu ◽

Jung-Hui Tsai ◽

Wen-Shiung Lour ◽

Der-Feng Guo ◽

...

Keyword(s):

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Temperature Dependent

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On the Temperature-Dependent Electron Impact Ionizations in a Step-Graded InAlGaAs∕InP Collector Double Heterojunction Bipolar Transistor

Electrochemical and Solid-State Letters ◽

10.1149/1.2784145 ◽

2007 ◽

Vol 10 (12) ◽

pp. H351

Author(s):

Tzu-Pin Chen ◽

Ching-Wen Hung ◽

Kuei-Yi Chu ◽

Li-Yang Chen ◽

Tsung-Han Tsai ◽

...

Keyword(s):

Electron Impact ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Temperature Dependent ◽

Double Heterojunction

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