On the Temperature-Dependent Electron Impact Ionizations in a Step-Graded InAlGaAs∕InP Collector Double Heterojunction Bipolar Transistor

2007 ◽  
Vol 10 (12) ◽  
pp. H351
Author(s):  
Tzu-Pin Chen ◽  
Ching-Wen Hung ◽  
Kuei-Yi Chu ◽  
Li-Yang Chen ◽  
Tsung-Han Tsai ◽  
...  
Keyword(s):  
Electron Impact ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Temperature Dependent ◽  
Double Heterojunction

Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector

2008 ◽  
Vol 103 (11) ◽  
pp. 114506 ◽  
Author(s):  
Tzu-Pin Chen ◽  
Wei-Hsin Chen ◽  
Chi-Jhung Lee ◽  
Kuei-Yi Chu ◽  
Li-Yang Chen ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Temperature Dependent ◽  
Double Heterojunction

InGaP∕GaAs0.94Sb0.06∕GaAs double heterojunction bipolar transistor

2002 ◽  
Vol 38 (6) ◽  
pp. 289 ◽  
Author(s):  
B.P. Yan ◽  
C.C. Hsu ◽  
X.Q. Wang ◽  
E.S. Yang
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Double Heterojunction

A THz InGaAs/InP double heterojunction bipolar transistor withfmax= 325 GHz and BVCBO= 10.6 V

2013 ◽  
Vol 34 (5) ◽  
pp. 054006 ◽  
Author(s):  
Wei Cheng ◽  
Yuan Wang ◽  
Yan Zhao ◽  
Haiyan Lu ◽  
Hanchao Gao ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Double Heterojunction
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