Room temperature spectroscopic characterization of mid-infrared GaInSb quantum-well laser structures

ABSTRACTLow-temperature photoluminescence measurements were performed in order to probe the optical quality of SiGe/Si quantum-well wire structures fabricated by electron-beam lithography and subsequent reactive ion etching, having the patterned polymethylmethacrylate resist as an etch mask. In addition, one set of quantum-well wire structures was post-treated by means of annealing in a hydrogen environment. Our results show that even for the smallest wires of about 100nm in width, the wires exhibit phonon-resolved photoluminescence spectra, similar to that from the molecular beam eptitaxially grown SiGe single quantum well which was used as starting material for the patterning process. After the patterning process a new sharp peak appears in the photoluminescence spectra at 0.97eV in photon energy. Our investigation suggests that this feature is introduced by damage during the patterning process and most probably identical to the G-line, which previously was identified as originating from the dicarbon centre (substitutional carbon-interstitial carbon) in Si. This centre is known to be a very common endproduct of irradiating Si near room temperature which is the case at our patterning process.

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Surface photo-voltage characterization of GaAs/AlGaAs single quantum well laser structures grown by molecular beam epitaxy

Semiconductor Science and Technology ◽

10.1088/0268-1242/29/3/035002 ◽

2014 ◽

Vol 29 (3) ◽

pp. 035002 ◽

Cited By ~ 1

Author(s):

R Muralidharan ◽

V Ramesh ◽

Puspashree Mishra ◽

T Srinivasan

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Single Quantum ◽

Single Quantum Well ◽

Quantum Well Laser

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Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/49/43/435107 ◽

2016 ◽

Vol 49 (43) ◽

pp. 435107 ◽

Cited By ~ 5

Author(s):

M Kesaria ◽

M de la Mare ◽

A Krier

Keyword(s):

Quantum Well ◽

Room Temperature ◽

Mid Infrared ◽

Multi Quantum Well

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Darstellung, Reaktionen und spektroskopische Charakterisierung von [Os2X8]2-, X = Cl, Br, I, und Kristallstruktur von (PPN)2[Os2I8] · 2 CH2Cl2 / Preparation, Reactions and Spectroscopic Characterization of [Os2X8]2-, X = Cl, Br, I, and Crystal Structure of (PPN)2[Os2I8] · 2 CH2Cl2

Zeitschrift für Naturforschung B ◽

10.1515/znb-1990-1011 ◽

1990 ◽

Vol 45 (10) ◽

pp. 1416-1424 ◽

Cited By ~ 8

Author(s):

W. Preetz ◽

P. Hollmann ◽

G. Thiele ◽

H. Hillebrecht

Keyword(s):

Crystal Structure ◽

Structure Determination ◽

Triple Bond ◽

Room Temperature ◽

Spectroscopic Characterization ◽

Spectroscopic Constants ◽

Monoclinic System ◽

X Ray ◽

Fine Structures

The triply bonded octahalogenodiosmate(III) anions [Os2X8]2-, previously known with X = Cl, Br, have now been extended to include the iodide with two staggered OsI4 units. This compound was prepared by treating [Os2Cl8]2- with Nal at room temperature in acetone solution. The structure determination by X-ray diffractometry on single crystals of (PPN)2[Os2I8] · 2 CH2Cl2, reveals crystallization in the monoclinic system, space group P21/c with Z = 4. The Os-Os triple bond is with 2.212(1) Å the longest within the three octahalogenodiosmates(III). The Raman spectra show ν(OsOs) at 285, [Os2Cl8]2-; at 287, [Os2Br8]2- and for the iodo compound at 270.1 cm-1 with up to three overtones. The spectroscopic constants are calculated to be ω1 = 270.9 cm-1; X11 = -0.50 cm-1. The 10 Κ UV-VIS spectra of solid [(n-C4H9)4N]2[Os2X8] exhibit δ-π* transitions with maxima at 723, 690 and 643 nm, superimposed by vibrational fine structures with long progressions of 195, 211 and 183 cm-1 for X = Cl, Br, I, respectively. Oxidation of [Os2X8]2-, X = Cl, Br with the corresponding halogen leads to the cleavage of the Os-Os bond, and the dekahalogenodiosmates(IV), [Os2X10]2-, are formed

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